Next Generation RF and Power GaN based Epitaxial Development

High Performance GaN HEMTs are the key components for many applications in communications, radar, sensing, and power applications. This includes high efficiency, high linearity low energy consumption power amplifiers; high gain low noise amplifiers; low loss high isolation switches. This proposed project will be investigation of new epitaxial structures to (i) optimise for multi-platform applications using TCAD techniques; (ii) layout design optimization for high performance at different operating frequencies and applications; (iii) development of fabrication modules to realise integrated devices; and (iv) characterization and modelling to correlate performance improvements to applied improvements. Variety of epitaxial stacks will be used in epitaxial wafers grown and supplied by IQE, this will channel, barrier, and buffer thickness, composition, and structure experiments aiming to enhance electronic properties such as current leakage, efficiency, linearity, switching speed, and gain. The ultimate target would be development of a single epitaxial platform to meet broad range of GaN electronic application operating up to kilovolt regimes and THz frequencies. Proposed items could be investigated in this project.