High performance III-V semiconductor materials for magnetic Hall Effect sensors


A Hall effect sensor is a transducer that varies its output voltage in response to a magnetic field, used in a wide range of applications for proximity switching, positioning, speed detection, and current sensing. Typical Hall sensors are manufactured from silicon but are limited in terms of sensitivity and temperature operating range as a result of the fundamental material properties.
This project brings together a consortium of SMEs (Advanced Hall Sensors, Compound Semiconductor Technologies), Manchester University and a UK global metrology player, Renishaw, in order to develop a new family of industrial measurement products based on a novel material as an alternative to Silicon.
The new sensor concept uses compound semiconductor materials based on Gallium Arsenide which are engineered to use quantum effects for superior performance in real world, high-resolution metrology applications.

Lead Participant

Project Cost

Grant Offer

Advanced Hall Sensors Limited, STOCKPORT £127,933 £ 76,700


Compound Semiconductor Technologies Global Limited, Blantyre, UK £117,307 £ 70,000
Renishaw P L C, GLOUCESTERSHIRE £106,074 £ 53,037
The Victoria University of Manchester £74,176 £ 74,176


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