Ultra-high frequency interconnects for Compound Semiconductors

To satisfy demands to transport the ever increasing amounts of data generated in future 5G mobile networks, greater spectrum is needed in the backhaul network. Since the already crowded lower part of the spectrum is also under consideration for re-allocation for 5G applications, backhaul transmission at much higher frequencies must be considered. Channels in D-band (110-175GHz) are therefore being proposed to satisfy this need and this will require new technologies to handle the signals. Components which operate at these frequencies have been demonstrated in research labs but little has been considered about how they can be integrated into a transmit-receive module. In particular, it is critical to develop a robust method of making low loss connections between the active circuits and to the customer interface, which is usually a waveguide port connected to an external antenna. This proposal will address this issue by exploring designs and assembly techniques to provide low loss D-band transitions between compound semiconductor components and their connection to external antennas and devices made in other technologies.