ALEGRO: Atomic Layer Deposition and Etching for GaN Power Device Applications

Electric cars and electric power delivery need efficient electrical switching devices. Semiconductor devices can do this, but also waste some energy when switching. This project plans to demonstrate high voltage switching devices using gallium nitride (GaN), the most significant semiconductor material after silicon, in a novel device format which can operate more efficiently and switch faster than the current device hybrids based on compound semiconductors combined with silicon. Making such devices will require almost atomic precision in etching and depositing layers. The project will further develop atomic layer etching (ALE) and atomic layer deposition (ALD) tools and processes ready for the manufacture of such devices. Oxford Instruments brings its experience as a process tool manufacturer for plasma-enhanced ALD, and its recent innovation in ALE, and will develop these tools and processes. The University of Glasgow will use its expertise in device design and manufacture to demonstrate a process flow for device manufacture.