GaN Sense

Abstract

This project aims to demonstrate a smart COMBO Gallium Nitride on Silicon (GaN-on-Si) multisensory technology platform for simultaneous flow, pressure, temperature and gas (CO2 or H2) detection in usual and harsh environments (e.g. aerospace, automotive, industrial, and medical). All the existent solutions are not suitable for harsh environments and are based on bulky and overpriced technology based on discrete Si type sensors. They are exploited by companies, such as Bosch, Austria Microsystems (AMS), and Sensirion. Our proprietary technology is based on integrated AlGaN/GaN heterostructures combined with a deep etch of the Si substrate to leave thin membranes behind where highly sensitive elements for gas, pressure, temprature and flow are embedded. These sensitive elements are made of surface electron layers (known under the name of 2DEGs - two dimensional electron gases) formed at the interface between different nitride based materials. Two micro SMEs - Cambridge GaN Devices (CGD) and Flusso (FLS) - one large company - Microsemi (MSL) - and University of Cambridge (UCAM) are forming a small and dynamic consortium with complementary skills and expertise, in a strong position to exploit major commercial outcomes of this project.

Lead Participant

Project Cost

Grant Offer

Cambridge Gan Devices Limited, Cambridge £71,814 £ 50,270
 

Participant

Microsemi Semiconductor Limited, Bristol £62,808 £ 31,404
Flusso Limited, Cambridge £148,097 £ 103,670
University of Cambridge, United Kingdom £121,337 £ 121,337

Publications

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