P-type Oxide Semiconductor Thin-films (POST)

The main motivation for this project is to open new market opportunities in radio frequency identification (RFID), the Internet of Things (IoT) and other flexible electronics applications, through the development of low-cost flexible p-type transistors (PMOS) to complement existing amorphous oxide n-type (NMOS) capability. NMOS based logic is sufficient for initial RFID applications in flexible electronics but complementary logic (CMOS), formed from combining n-type and p-type devices in single logic elements, is both lower power and faster than either NMOS or PMOS alone. As the overall power budget is often constrained (e.g. in mobile phones) then improved power consumption provides opportunities in increasing circuit complexity or areas requiring very low power. To date, commercially viable inorganic PMOS materials have not been identified. The project focuses on a targeted evaluation of the parameter space of novel P-type metal oxide based semiconductors, using high throughput thin film techniques proven for rapid identification and screening of the processing and composition space of functional thin film materials . Through this there will be demonstration of thin film transistor performance capable of implementation in a cost-effective flexible CMOS technology. This will be supported by SPICE modelling and circuit simulation to demonstrate expected circuit performance.