To demonstrate the potential to make low cost, high efficiency LEDs using 3C-SiC substrates
Lead Participant:
ANVIL SEMICONDUCTORS LIMITED
Abstract
The purpose of the project is to develop high efficiency, low cost GaN based LEDs on Anvil’s silicon carbide on
silicon wafers (3C-SiC/Si). Anvil has recently completed an Innovate UK funded feasibility study with the
University of Cambridge that demonstrated its 3C-SiC layers, developed for low cost high efficiency power
devices, have an exciting application in LEDs by providing a cubic substrate that enables the growth of single
phase cubic GaN on large diameter silicon wafers. The ability to produce cubic GaN on large diameter silicon
wafers is clearly recognised as a key enabler for increasing the efficiency and reducing the cost of LED lighting.
Plessey have started to commercialise LEDs produced in conventional (Hexagonal) GaN grown on large
diameter silicon wafers using IP originally developed at The University of Cambridge. Anvil’s IP manages the
inevitable stresses when growing SiC on silicon wafers. The project brings these three technologies together, to
produce high efficiency, low cost LEDs. Such a cost/performance improvement would have a disruptive effect
on the LED market advancing the replacement of incandescent lights and CFLs with solid state lighting.
silicon wafers (3C-SiC/Si). Anvil has recently completed an Innovate UK funded feasibility study with the
University of Cambridge that demonstrated its 3C-SiC layers, developed for low cost high efficiency power
devices, have an exciting application in LEDs by providing a cubic substrate that enables the growth of single
phase cubic GaN on large diameter silicon wafers. The ability to produce cubic GaN on large diameter silicon
wafers is clearly recognised as a key enabler for increasing the efficiency and reducing the cost of LED lighting.
Plessey have started to commercialise LEDs produced in conventional (Hexagonal) GaN grown on large
diameter silicon wafers using IP originally developed at The University of Cambridge. Anvil’s IP manages the
inevitable stresses when growing SiC on silicon wafers. The project brings these three technologies together, to
produce high efficiency, low cost LEDs. Such a cost/performance improvement would have a disruptive effect
on the LED market advancing the replacement of incandescent lights and CFLs with solid state lighting.
Lead Participant | Project Cost | Grant Offer |
---|---|---|
ANVIL SEMICONDUCTORS LIMITED | £145,053 | £ 101,537 |
  | ||
Participant |
||
UNIVERSITY OF CAMBRIDGE | £98,855 | £ 98,855 |
PLESSEY SEMICONDUCTORS LIMITED | £47,882 | £ 28,729 |
INNOVATE UK |
People |
ORCID iD |