Ambipolar Charge Transport in Organic Semiconductors and Devices
Lead Research Organisation:
Imperial College London
Department Name: Physics
Abstract
Recent years have seen tremendous advances in the area of organic electronics mainly motivated by their emerging applications in electronic devices. A very important electronic device that is in the heart of today's microelectronic circuits is the transistor since it represents the building block of all everyday electronics. Very recently, organic based transistors also made their debut in a number of electronic devices and can be arguably viewed as possible alternatives to silicon-based devices in a range of low-cost and high-volume applications.Although recent progress is impressive, use of organic transistors in practical applications is hampered because the minimum requirements (speed, power-dissipation, cost) presently cannot be meet. The proposed work addresses these specific problems using an entirely different approach. We will study the electronic properties of organic semiconductors that are capable of transporting both electrons and holes. These are the so-called ambipolar organic semiconductors. During this fellowship we will develop and advance the knowledge on ambipolar transport in organic semiconductors but we will also exploit and assess various technologically relevant phenomena.We will first study ambipolar transport in a number of known ambipolar organic semiconductors through a combination of electrical, structural, chemical and spectroscopic measurements. Understanding the key electronic properties of these materials is essential for the development of improved or new semiconductors that will be subsequently synthesized through collaborations with various chemistry groups. Using the obtained knowledge, we will demonstrate ambipolar organic transistors and, initially, basic logic circuits like voltage inverters. New applications such as light-emitting transistors and sensors are expected to arise as a result of this work. Moreover, understanding ambipolar transport in organic materials is of basic scientific interest and is expected to benefit other scientific disciplines including chemistry and material science.
Organisations
People |
ORCID iD |
Thomas Anthopoulos (Principal Investigator) |
Publications
Ball J
(2009)
Complementary circuits based on solution processed low-voltage organic field-effect transistors
in Synthetic Metals
Bashir A
(2009)
High-Performance Zinc Oxide Transistors and Circuits Fabricated by Spray Pyrolysis in Ambient Atmosphere
in Advanced Materials
Wöbkenberg P
(2008)
Low-voltage organic transistors based on solution processed semiconductors and self-assembled monolayer gate dielectrics
in Applied Physics Letters
Wöbkenberg P
(2008)
High mobility n-channel organic field-effect transistors based on soluble C60 and C70 fullerene derivatives
in Synthetic Metals
Wöbkenberg P
(2008)
Fluorine containing C60 derivatives for high-performance electron transporting field-effect transistors and integrated circuits
in Applied Physics Letters
Title | LOW-VOLTAGE THIN-FILM FIELD-EFFECT TRANSISTORS |
Description | A method of forming a low- voltage thin-film field-effect transistor comprising: forming a gate; forming a dielectric layer on the surface of the gate; forming a source region and a drain region; and forming a semiconductor layer adjacent the dielectric layer; wherein the dielectric layer is formed as a native oxide layer by oxidising the surface of the gate; and wherein the semiconductor layer is deposited by spray pyrolysis. The method may further comprise functionalising the dielectric layer with a self-assembling monolayer dielectric layer. The present disclosure also discloses forming the dielectric layer as a self-assembling monolayer, without first forming a native oxide (or other) dielectric layer. |
IP Reference | WO2010004271 |
Protection | Patent application published |
Year Protection Granted | 2010 |
Licensed | No |
Impact | None |