Device Electronics Based on nanoWires and NanoTubes

Lead Research Organisation: De Montfort University
Department Name: Engineering

Abstract

There is considerable scope for CNFETs and Si Nanowires with their capability of ballistic transport, to be introduced into standard CMOS via a hybrid technology.The main reason currently hampering the use of this technology is an absence of controlled fabrication techniques in MOS type configurations with predictable device characteristics. Adequate physical models and simulation tools are necessary to address this issue.collaborative research involves four partners: 1) Pisa : Atomistic modelling of ballistic transport in gated structures with contacts. (2) Vienna: Effective mass approach to transport inclusive of scattering.(3) De Montfort University : Characterisation, parameter extraction and defect analysis of devices fabricated at Cambridge. The parameters will be fed into the modelling at Pisa and Vienna.(4) Cambridge University : Fabrication of devices.overall goal of the project is to carry out a comprehensive analysis linking theory with experiment to enable some fundamental design rules for fabrication of such technologies in future.

Related Projects

Project Reference Relationship Related To Start End Award Value
EP/D064465/1 15/01/2007 27/10/2007 £484,397
EP/D064465/2 Transfer EP/D064465/1 28/10/2007 27/10/2010 £411,272
 
Description Carbon Nanotubes 
Form Of Engagement Activity A magazine, newsletter or online publication
Part Of Official Scheme? Yes
Geographic Reach International
Primary Audience Professional Practitioners
Results and Impact Position paper on Carbon Nanotubes EU funded nanoICT Coordination Action.

N/A
Year(s) Of Engagement Activity 2008