Growth of thick and flat high quality GaN using nano-column compliant layers
Lead Research Organisation:
University of Bristol
Department Name: Physics
Abstract
This research will primarily develop a novel technique to grow a high volume of high quality gallium nitride for use in optoelectronic, microelectronic and biomedical devices. It is currently very difficult to produce large single crystal gallium nitride due to the high pressures and temperatures required, and this is inhibiting the wide uptake of this disruptive material technology. Instead, the technique involved in this proposal uses a high density of minature columns with dimensions on the nano-scale to initiate the chemical growth of a large crystal from a crystal of another material that has a different crystal structure. The columns reduce the problems associated with the different crystal structures and has the potential to produce high quality gallium nitride at relatively low cost.The research will determine the optimum column size and the best conditions for the crystal growth by theoretical modelling and experimentation. Three different complementary growth techniques at the universities of Nottingham and Bath will be used, and the advanced characterisation techniques and expertise at Bristol University will provide essential feedback and understanding of the nanostructures to the growth personnel.
Organisations
People |
ORCID iD |
David Cherns (Principal Investigator) |
Publications
Cherns D
(2008)
Defect reduction in GaN/(0001)sapphire films grown by molecular beam epitaxy using nanocolumn intermediate layers
in Applied Physics Letters
Cherns D
(2008)
Defect-controlled growth of GaN nanorods on (0001)sapphire by molecular beam epitaxy
in Applied Physics Letters
Cherns D
(2010)
GaN devices based on nanorods
in Journal of Physics: Conference Series
Foxon C
(2009)
A complementary geometric model for the growth of GaN nanocolumns prepared by plasma-assisted molecular beam epitaxy
in Journal of Crystal Growth
Meshi L
(2008)
The reduction of threading dislocations in GaN using a GaN nanocolumn interlayer
in physica status solidi c
Wang X
(2013)
Continuous-Flow MOVPE of Ga-Polar GaN Column Arrays and Core-Shell LED Structures
in Crystal Growth & Design
Description | Solar cells based on InGaN nanostructures, EPSRC grant EP/1035501/1 |
Amount | £450,000 (GBP) |
Funding ID | EP/I035501/1 |
Organisation | Engineering and Physical Sciences Research Council (EPSRC) |
Sector | Public |
Country | United Kingdom |
Start | 08/2011 |
End | 08/2014 |
Title | ELECTRICAL DEVICE |
Description | The invention provides an electrical device, e.g. a solar cell,comprising at least one sub-cell containing a plurality of InxGa1-xN nanocolumns or nanorods, wherein 0 = x = 1. |
IP Reference | WO2012076901 |
Protection | Patent granted |
Year Protection Granted | 2012 |
Licensed | No |
Impact | The structures envisaged in the patent have been demonstrated |