Spin@RT: Room Temperature Spintronics
Lead Research Organisation:
Durham University
Department Name: Physics
Abstract
Abstracts are not currently available in GtR for all funded research. This is normally because the abstract was not required at the time of proposal submission, but may be because it included sensitive information such as personal details.
Publications
Abes M
(2010)
Spin polarization and exchange coupling of Cu and Mn atoms in paramagnetic CuMn diluted alloys induced by a Co layer
in Physical Review B
Abes M
(2009)
The spin polarization of Mn atoms in paramagnetic CuMn alloys induced by a Co layer
in Journal of Applied Physics
Atkinson D
(2008)
Controlling domain wall pinning in planar nanowires by selecting domain wall type and its application in a memory concept
in Applied Physics Letters
Bogart L
(2009)
Dependence of domain wall pinning potential landscapes on domain wall chirality and pinning site geometry in planar nanowires
in Physical Review B
Eastwood D
(2008)
The Role of Preoxidation on the Interface Structure of Co/MgO Multilayers
in IEEE Transactions on Magnetics
Fan R
(2010)
Ferromagnetism at the interfaces of antiferromagnetic FeRh epilayers
in Physical Review B
Hickey M
(2010)
Spin-transfer torque efficiency measured using a Permalloy nanobridge
in Applied Physics Letters
Kruglyak V
(2007)
Optical excitation of a coherent transverse optical phonon in a polycrystalline Zr metal film
in Physical Review B
Lamperti A
(2007)
Interface stability of magnetic tunnel barriers and electrodes
in physica status solidi (a)
Lepadatu S
(2009)
Dependence of domain-wall depinning threshold current on pinning profile.
in Physical review letters
| Description | The work has led to a more detailed understanding of the way in which thin film magnetic sensors work. In particular, the role of interface structure has been elucidated and from this understanding manufacturing processes have been improved. Durham work has also shown how magnetic domains can be manipulated as logic elements and memory devices. A novel magnetic storage device has been designed and the IP protected. |
| Exploitation Route | Application of devices based on phase transition between magnetic states has considerable attraction and the work on FeRh has revealed the magnetic structure within this model system and how parts of the material close to the surface remain in the ferromagnetic phase when most of the film has been transformed into the antiferromagnetic state. The understanding of the way this transition occurs has implication for other systems being investigated. The use of magnetic domains with specific chiral nature in magnetic random access memory (MRAM) remains a distinct possibility. The exciting feature of the demonstrator device is that 8 bit devices can be made changing only the magnetic state of the device. Use of multiple bit memory greatly increases the data storage density in real devices. The technology is feasible, but whether it is viable in a manufacturing and commercial context remains to be determined. |
| Sectors | Electronics |
| Description | Studies of the interface structure in thin film spintronic materials fabricated from multiple layers of FeCoB and Alumina have revealed how heat treatment can be used to enhance the magnetic properties of devices made from these materials. One of our European collaborators has been able to take these results to improve their production processes. Similarly, an understanding of the crystallography of materials which provide coupling of magnetic spins between layers has enabled the design of devices to be enhanced. |
| First Year Of Impact | 2008 |
| Sector | Electronics,Manufacturing, including Industrial Biotechology |
| Impact Types | Economic |
| Description | RhoMap Ltd |
| Organisation | RhoMap |
| Country | United Kingdom |
| Sector | Private |
| PI Contribution | Embryonic spin-out company to commercialise chiral MRAM |
| Collaborator Contribution | Understanding of the MRAM market |
| Impact | Understanding that a spin-out was not viable |
| Start Year | 2008 |
| Title | Data Storage Device |
| Description | Magnetic data storage device |
| IP Reference | GB0816640.7 |
| Protection | Patent application published |
| Year Protection Granted | |
| Licensed | No |
| Impact | Interaction with major global company in this field Proof of Concept funding |
| Title | Magnetic structure with multiple-bit storage capabilities |
| Description | Magnetic storage device |
| IP Reference | GB0701570.4 |
| Protection | Patent application published |
| Year Protection Granted | |
| Licensed | No |
| Impact | Led to interactions with global company |