Modelling transport in graphene-based transistors
Lead Research Organisation:
Lancaster University
Department Name: Physics
Abstract
Stable films of one-atom thick sheets of graphite, known as graphene, were fabricated for the first time in 2004. The discovery of this new material sparked a huge amount of interest because the charge carriers in graphene have fascinating and unique properties, and because graphene has huge potential for nanoelectronic applications. This theoretical proposal will model the electronic transport properties of ultra-thin graphene films only two or three atomic layers thick. It will investigate the influence of external gate potentials that can smoothly and controllably switch the films between metallic and semiconducting conduction properties. This will lead to the ability to electrostatically define complete circuits, including graphene-based transistors, on a single ultra-thin graphene film.
Organisations
Publications
Ferone R
(2011)
Manifestation of LO-LA phonons in Raman scattering in graphene
in Solid State Communications
Fogler M
(2010)
Comment on "Screening in gated bilayer graphene"
in Physical Review B
Koshino M
(2009)
Parity and valley degeneracy in multilayer graphene
Koshino M
(2009)
Gate-induced interlayer asymmetry in ABA-stacked trilayer graphene
in Physical Review B
Koshino M
(2009)
Trigonal warping and Berry's phase N p in ABC-stacked multilayer graphene
in Physical Review B
Koshino M
(2010)
Parity and valley degeneracy in multilayer graphene
in Physical Review B
Koshino M
(2008)
Gate-induced interlayer asymmetry in ABA-stacked trilayer graphene
Koshino M
(2011)
Physics and Applications of Graphene - Theory
| Description | EPSRC has indicated that submission is not required. |
| Exploitation Route | EPSRC has indicated that submission is not required. |
| Sectors | Electronics |