Electrically Pumped Broad Band and Vertical Cavity Semiconductor Dilute Nitride Amplifiers for Metro and Acess Networks
Lead Research Organisation:
University of Bristol
Department Name: Electrical and Electronic Engineering
Abstract
Optical fibre communications are used for transmission of voice, data and video throughout the world today. As the demand for broadband services in the access segment of the industry continues to increase, network operators face increased challenges to deliver higher bandwidths since customers are often not prepared to pay significantly more than at present for these services. Cost-effective, well-managed metropolitan networks are therefore required that have sufficient capacity and flexibility to respond to future demand. For future optical metro and access networks it is essential to develop cheap, reliable components with good performance at the wavelength of 1.3 micron that allows transmission of high bandwidths over fibre. Such networks are very cost-sensitive, since some components serve just one customer instead of being shared by large numbers of users as in, for example, a trans-oceanic cable. There is therefore a pressing need for optical components that can offer the required functionality at low cost with high bandwidth. In this context, components based on the dilute nitride (GaInNAs/GaAs) system are predicted to offer significant advantages over devices using the more conventional GaInAs/InP system. In particular the broad gain spectrum of GaInNAs in the wavelength range 1.3 - 1.55 micron makes it especially suitable for use in planar semiconductor optical amplifiers, whilst the aspects of growth on GaAs and integration with GaAs/AlGaAs DBRs are attractive for applications in vertical-cavity devices. Initial work in this area has been successful, with the demonstration of edge-emitting lasers and vertical-cavity surface-emitting lasers (VCSELs) with good light output and fast modulation speed. The current proposal seeks to further exploit the device potential of dilute nitrides by focussing on the design and characterization of two specific photonic devices: an edge emitting broad band semiconductor optical amplifier (BBSOA) and an electrically pumped vertical cavity semiconductor optical amplifier (VCSOA). This joint proposal between Essex and Bristol will be productive, cost-effective and wide-ranging, covering both VCSOAs and BBSOAs for different metro and access applications in the 1.3 micron communications window.
Organisations
People |
ORCID iD |
Judy Rorison (Principal Investigator) |
Publications
Christopher Broderick ,
(2017)
Handbook of Optoelectronic Device Modelling and Simulation
Kengradomying O
(2013)
Modelling escape and capture processes in GaInNAs quantum well solar cells
in physica status solidi c
Marko IP
(2016)
Optical gain in GaAsBi/GaAs quantum well diode lasers.
in Scientific reports
Wang Q
(2014)
Modelling of quantum dot intermediate band solar cells: effect of intermediate band linewidth broadening
in IET Optoelectronics
Wang Q
(2017)
Enhancing the efficiency of the intermediate band solar cells by introducing: carrier losses, alloying and strain
in IET Optoelectronics
Description | The project was very successful in having many talks and papers and two invited book chapters arising from it. It benefitted from the applicants being involved in an EU COST action MP0805 on III-V-N Materials and Devices (2009-13) where the PI was Euopean Vice-Chair. This enabled us to obtain some novel materials. In this grant we investigated the tunability of dilute nitride by investigating the effects of the N incorporation on the bandstructure. We investigated these effects on optical properties for lasers, amplifiers and for electronic devices (Gunn devices) where non-parabolicity of the band is important. We investigated N fluctuations caused by disorder and clustering effects (important for the amplifiers). We derived a method to calculate the density of states incorporating the effects of N. Dr Nikos Vogiatzis also developed a Monte Carlo code for transport in these materials and devices. Dr Vogiatzis was the RA on this grant and is now working in an optical communications company in the UK. Xiao Sun was a PhD student associated with this grant (worked on the N fluctations for semiconductor optical amplifier applications). Dr Sun is now working on this area in Alcatel ' I am now still working in Alcatel-Lucent Bell Labs, however in the past year, huge changes have made that Alcatel-Lucent has merged with Nokia to form a new "Nokia" company and this also affects the Shanghai Bell Co. Ltd.' He has published in this same area and has done 5 patents for this work in optical communications. Dr Pavlo Ivanov also did some RA work on this. He is doing an RA at Sheffield University now. |
Exploitation Route | We investigate dilute nitride bandstructure and carrier dynamics. This has application in optical communications, photovoltaics and RF (gunn effect devices). |
Sectors | Digital/Communication/Information Technologies (including Software) Electronics Energy |
Description | We investigated the role of N is tuning Semiconductor Optical Amplifiers for use in multiwavelength amplifier (for WDM applications) . The PhD student Xiao Sun ( I am now still working in Alcatel-Lucent Bell Labs, however in the past year, huge changes have made that Alcatel-Lucent has merged with Nokia to form a new "Nokia" company and this also affects the Shanghai Bell Co. Ltd.). He has published related work and has done 5 patents on this work. |
First Year Of Impact | 2012 |
Sector | Digital/Communication/Information Technologies (including Software) |
Impact Types | Economic |
Description | invited talk at VCSEL day in Cardiff |
Form Of Engagement Activity | Participation in an activity, workshop or similar |
Part Of Official Scheme? | No |
Geographic Reach | International |
Primary Audience | Professional Practitioners |
Results and Impact | The talk was invited on new materials to be used in 'Vertical Cavity Surface Emitting Lasers' VCSELs and the audience were crystal growers and manufacturers of VCSELs. |
Year(s) Of Engagement Activity | 2017 |