Silicon based QD light sources and lasers

Lead Research Organisation: University of Sheffield
Department Name: Physics and Astronomy

Abstract

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Publications

10 25 50
 
Description Observation of emission from single quantum dots at 1.5um from a structure grown on Si.
Exploitation Route Potential to be used to produce single photon sources operating at telecommunications wavelengths and directly compatible with CMOS electronics
Sectors Aerospace

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Title Enhanced defect filter layers by in-situ annealing 
Description The growth of III-V semiconductors on Si requires carefully optimised defect filter layers to reduce the density of dislocations which are able to propagate from the Si_III-V interface to the III-V active region. Defect filter layers use strained InGaAs-GaAs superlattices. We have shown that by adding insitu-annealing the efficiency of these DFLs is increased with lower numbers of dislocations reaching the III-V active region. 
Type Of Material Improvements to research infrastructure 
Year Produced 2016 
Provided To Others? Yes  
Impact We have been able to fabricate lasers on Si substrates with improved performance.