Manufacturing of nano-engineered III-N semiconductors: Equipment Business Case
Lead Research Organisation:
University of Bath
Department Name: Electronic and Electrical Engineering
Abstract
Tools for defining nanoscale device geometry are widely used in CMOS manufacturing but the economies of scale of Si VLSI do not apply to most other semiconductor industries. Conventional photolithographic techniques are limited by the size of the smallest features that they can pattern so that achieving even smaller features typically requires using the expensive and slow technique of Electron Beam Lithography. As a result only very small regions can be patterned at the highest resolution.
Cost-effective wafer-scale solutions for nanoscale devices do exist but are less widely available. They include Nanoimprint Lithography (NIL), Self-Assembly Lithography (SAL), or more recently Displacement Talbot Lithography (DTL). NIL can achieve sub-10nm features but is very sensitive to particle defects, SAL is cheap but is restricted to limited patterns and domain sizes, and DTL is a new and potentially disruptive technology for applications in the 150-1000 nm range (No DTL systems exist in the UK). The aim of this grant is to bring the two techniques of NIL and DTL more into the mainstream by demonstrating their capability for up-scaling from small area nanopatterned materials or devices into full wafers. The NIL and DTL equipment will allow us to determine the most suitable technique (since either one will not satisfy the requirements for all applications) and related nanofabrication processes creating nano-scale patterns (10-1000 nm) in a range of materials for a variety of applications.
The ability to nanopattern at the wafer scale is essential for commercial production of emerging device types and for research applications where large-area uniformity is necessary for subsequent processing steps. An example of the latter is crystal growth on nanopatterned substrates since large area patterns are essential to achieve good uniformity of growth in the growth reactor.
The ultimate goal behind establishing these nanolithography techniques is to develop advanced fabrication processes for the UK's 21st Century manufacturing industries, and in particular the manufacturing of III-Nitride semiconductor materials. The III-Nitrides are functional materials that underpin the emerging global solid state lighting and power electronics industries. But their properties enable far wider applications: solar energy conversion by photovoltaic effect and water splitting, water purification, sensing by photonic and piezoelectric effects and in non-linear optics. Many applications of these functions of the III-Nitrides are enhanced, even enabled by creating three dimensional (3D) nanostructures. However the exploitation of these properties can only be achieved if there are production-worthy processes available. Hence the purpose of this proposal.
Cost-effective wafer-scale solutions for nanoscale devices do exist but are less widely available. They include Nanoimprint Lithography (NIL), Self-Assembly Lithography (SAL), or more recently Displacement Talbot Lithography (DTL). NIL can achieve sub-10nm features but is very sensitive to particle defects, SAL is cheap but is restricted to limited patterns and domain sizes, and DTL is a new and potentially disruptive technology for applications in the 150-1000 nm range (No DTL systems exist in the UK). The aim of this grant is to bring the two techniques of NIL and DTL more into the mainstream by demonstrating their capability for up-scaling from small area nanopatterned materials or devices into full wafers. The NIL and DTL equipment will allow us to determine the most suitable technique (since either one will not satisfy the requirements for all applications) and related nanofabrication processes creating nano-scale patterns (10-1000 nm) in a range of materials for a variety of applications.
The ability to nanopattern at the wafer scale is essential for commercial production of emerging device types and for research applications where large-area uniformity is necessary for subsequent processing steps. An example of the latter is crystal growth on nanopatterned substrates since large area patterns are essential to achieve good uniformity of growth in the growth reactor.
The ultimate goal behind establishing these nanolithography techniques is to develop advanced fabrication processes for the UK's 21st Century manufacturing industries, and in particular the manufacturing of III-Nitride semiconductor materials. The III-Nitrides are functional materials that underpin the emerging global solid state lighting and power electronics industries. But their properties enable far wider applications: solar energy conversion by photovoltaic effect and water splitting, water purification, sensing by photonic and piezoelectric effects and in non-linear optics. Many applications of these functions of the III-Nitrides are enhanced, even enabled by creating three dimensional (3D) nanostructures. However the exploitation of these properties can only be achieved if there are production-worthy processes available. Hence the purpose of this proposal.
Planned Impact
This proposal is about providing access to wafer-scale nanolithography equipment to a collaboration of internationally leading researchers in the field of III-Nitride semiconductor materials. The III-Nitrides are materials that underpin the emerging global solid state lighting and power electronics industries. Nanostructuring these materials have the potential to enhance their properties and this will be the driving force behind developing the nanolithography capability. These researchers will then make the techniques available to other materials systems and applications as described in the linked research proposal.
Knowledge will be advanced through exploring the capability of DTL for sub-micron patterning and establishing the limits to the technique and how it compares to NIL. The linked research project will involve optical modelling of the DTL process to understand the variety of patterns that can be created.
The capability of large volume manufacturing of nanostructures will accelerate the scientific understanding of the role that they can play in increasing the quality of semiconductor crystals by reducing their defect density and in enabling future device architectures. The importance of this area of research is exemplified by the US administration's recent announcement of $200 million for the foundation of an 'Integrated Photonics Manufacturing Institute'.
The equipment will allow existing proof-of-principle devices that are created by EBL to be up-scaled to pilot production either within the university or commercial sectors. With successful IP protection this could lead to further research contracts in the short term (2-5 years from project start), the creation of a new spin-out company or a new product line within an existing business in the medium term. The wafer-scale processes that will be developed will have economic impact in reducing the costs involved in manufacturing processes.
In particular the programme of research will have direct impact on the industrial partners connected with the proposal. A number of the Research Projects identified in the linked research proposal that will be used to inform and validate the generic manufacturing processes have been inspired through these industrial connections. The work will also impact a wider range of semiconductor companies, including support industries such as the manufacturers of process equipment.
The UK-based expertise and capability will allow new ideas to be brought to market more quickly and cost-savings to be made in the manufacturing process leading to increased competitiveness of the UK semiconductor industry.
Highly-skilled personnel will be trained for future industrial roles on the advanced nanolithography equipment. For University of Bath researchers the training will be delivered via its availability in the cleanroom and external users via the Nanolithography Access scheme. New PhD students in the Condensed Matter CDT will be trained via a 4 day intensive training course covering all the equipment based in the David Bullet Nanofabrication Cleanroom.
Secondary training will be delivered to further researchers through inter- and intra-university seminars enabled by the networks to which the PIs and CIs belong. For example, the UK Nitrides Consortium, the management committee of which the PI serves, exists to allow for formal and informal interactions and the exchange of personnel. In addition, the Open Workshop will educate attendees on the capability of the systems purchased.
There will be long term impact on society through 1) enabling new types of integrated, multifunctional sensors for lab-on-a-chip medical diagnostics and gas sensing, 2) improving the energy efficiency of light emitters to accelerate the shift towards solid state lighting, and 3) developing a UK based semiconductor manufacturing industry that is world leading.
Knowledge will be advanced through exploring the capability of DTL for sub-micron patterning and establishing the limits to the technique and how it compares to NIL. The linked research project will involve optical modelling of the DTL process to understand the variety of patterns that can be created.
The capability of large volume manufacturing of nanostructures will accelerate the scientific understanding of the role that they can play in increasing the quality of semiconductor crystals by reducing their defect density and in enabling future device architectures. The importance of this area of research is exemplified by the US administration's recent announcement of $200 million for the foundation of an 'Integrated Photonics Manufacturing Institute'.
The equipment will allow existing proof-of-principle devices that are created by EBL to be up-scaled to pilot production either within the university or commercial sectors. With successful IP protection this could lead to further research contracts in the short term (2-5 years from project start), the creation of a new spin-out company or a new product line within an existing business in the medium term. The wafer-scale processes that will be developed will have economic impact in reducing the costs involved in manufacturing processes.
In particular the programme of research will have direct impact on the industrial partners connected with the proposal. A number of the Research Projects identified in the linked research proposal that will be used to inform and validate the generic manufacturing processes have been inspired through these industrial connections. The work will also impact a wider range of semiconductor companies, including support industries such as the manufacturers of process equipment.
The UK-based expertise and capability will allow new ideas to be brought to market more quickly and cost-savings to be made in the manufacturing process leading to increased competitiveness of the UK semiconductor industry.
Highly-skilled personnel will be trained for future industrial roles on the advanced nanolithography equipment. For University of Bath researchers the training will be delivered via its availability in the cleanroom and external users via the Nanolithography Access scheme. New PhD students in the Condensed Matter CDT will be trained via a 4 day intensive training course covering all the equipment based in the David Bullet Nanofabrication Cleanroom.
Secondary training will be delivered to further researchers through inter- and intra-university seminars enabled by the networks to which the PIs and CIs belong. For example, the UK Nitrides Consortium, the management committee of which the PI serves, exists to allow for formal and informal interactions and the exchange of personnel. In addition, the Open Workshop will educate attendees on the capability of the systems purchased.
There will be long term impact on society through 1) enabling new types of integrated, multifunctional sensors for lab-on-a-chip medical diagnostics and gas sensing, 2) improving the energy efficiency of light emitters to accelerate the shift towards solid state lighting, and 3) developing a UK based semiconductor manufacturing industry that is world leading.
Publications
Armstrong R
(2020)
Creation of regular arrays of faceted AlN nanostructures via a combined top-down, bottom-up approach
in Journal of Crystal Growth
Athanasiou M
(2020)
InGaN Nanohole Arrays Coated by Lead Halide Perovskite Nanocrystals for Solid-State Lighting
in ACS Applied Nano Materials
Bosch J
(2022)
Etching of the SiGa x N y Passivation Layer for Full Emissive Lateral Facet Coverage in InGaN/GaN Core-Shell Nanowires by MOVPE
in Crystal Growth & Design
Cameron D
(2023)
Core-Shell Nanorods as Ultraviolet Light-Emitting Diodes.
in Nano letters
Chausse P
(2019)
"Double" displacement Talbot lithography: fast, wafer-scale, direct-writing of complex periodic nanopatterns.
in Optics express
Chausse P
(2021)
Spatial periodicities inside the Talbot effect: understanding, control and applications for lithography.
in Optics express
Chausse PJP
(2019)
Understanding resolution limit of displacement Talbot lithography.
in Optics express
Chereau E
(2023)
Importance of As and Ga Balance in Achieving Long GaAs Nanowires by Selective Area Epitaxy
in Crystal Growth & Design
Coulon P
(2017)
Hybrid Top-Down/Bottom-Up Fabrication of Regular Arrays of AlN Nanorods for Deep-UV Core-Shell LEDs
in physica status solidi (b)
Coulon P
(2017)
Optical properties and resonant cavity modes in axial InGaN/GaN nanotube microcavities
in Optics Express
Description | This award made available two pieces of large-area nanofabrication equipment at the University of Bath. The programme of work was dominated by the Displacement Talbot Lithography (DTL) equipment rather than Nanoimprint Lithography as the capability of the equipment was found to be much greater. Combined with it being the only system in the UK meant that there was greater interest from non University of Bath researchers. During the award, we developed a new capability with the equipment ('Double' Displacement Talbot Lithography) that was not envisaged at the application stage that greatly increases the technique's flexibility that would be worthy of further research. Journal papers were published on this, the application of DTL to the nanoengineering of III-nitride semiconductors and understanding DTL in more detail. |
Exploitation Route | Processes and masks are available for the patterning of large areas of regular nanostructures down to about 150-200 nm on samples up to 100 mm in diameter that can be used in other applications. Both these and the new techniques reported in the scientific literature can be built upon in further research. |
Sectors | Aerospace Defence and Marine Electronics Energy Healthcare Manufacturing including Industrial Biotechology |
Description | This award relates to the purchase of nanolithographic patterning systems. At a academic level, these systems have facilitated a significant number of academic pursuits represented by the number of publications and academic collaborations associated with this award. This work has been gaining visibility such that in the last year it has led to us working with two companies to see how this new equipment might help their business. |
First Year Of Impact | 2021 |
Sector | Electronics,Manufacturing, including Industrial Biotechology |
Impact Types | Economic |
Description | Displacement Talbot Lithography: accelerating a versatile and low-cost patterning technique for precision manufacturing |
Amount | £727,375 (GBP) |
Funding ID | EP/V055224/1 |
Organisation | Engineering and Physical Sciences Research Council (EPSRC) |
Sector | Public |
Country | United Kingdom |
Start | 09/2021 |
End | 09/2024 |
Description | Manufacturing of Large-Area InP on nano-V-grooved CMOS compatible Si |
Amount | £63,000 (GBP) |
Organisation | Cardiff University |
Sector | Academic/University |
Country | United Kingdom |
Start | 03/2020 |
End | 04/2021 |
Title | Data set for Hybrid top-down/bottom-up fabrication of highly uniform and organized faceted AlN nanorod scaffold |
Description | This dataset contains scanning electron microscopy (SEM) images, transmission electron microscopy (TEM) pictures and Catodoluminescence (CL) measurements carried out on AlN nanorod. The samples were fabricated via a hybrid top-down/bottom up approach. Displacement Talbot Lithography is used to fabricate Au/Ni metal dots to act as a hard etch mask. Ultrathin AlN nanorod arrays are created thanks to a two-step dry-wet etching process with first, chlorine-based dry etching of an AlN template and second, KOH-based wet etching. AlN facet recovery is performed by Metal Organic Vapor Phase Epitaxy for various regrowth time. TEM and CL were used to assess the structural and optical quality of the AlN nanorod, respectively. |
Type Of Material | Database/Collection of data |
Year Produced | 2018 |
Provided To Others? | Yes |
Title | Dataset for "'Double' Displacement Talbot Lithography: fast, wafer-scale, direct-writing of complex periodic nanopatterns" |
Description | This study developed a new low-cost nanolithographic tool for creating periodic arrays of complex, nano-motifs, across large areas within minutes. Displacement Talbot Lithography is combined with lateral nanopositioning to enable large-area patterning with the flexibility of a direct-write system. This enables the creation of different periodic patterns in short timescales using a single mask with no mask degradation. The dataset includes images of Matlab models (in .csv format) and SEM experimental pictures of the different experiments realised (discrete lateral illumination, continuous displacements during one illumination). |
Type Of Material | Database/Collection of data |
Year Produced | 2019 |
Provided To Others? | Yes |
Title | Dataset for "AlN overgrowth of nano-pillar-patterned sapphire with different offcut angle by metalorganic vapor phase epitaxy" |
Description | This dataset contains scanning electron microscopy (SEM) images of nano-pillar-patterned sapphire created via Displacement Talbot Lithography and Inductively coupled plasma dry etching. |
Type Of Material | Database/Collection of data |
Year Produced | 2019 |
Provided To Others? | Yes |
Title | Dataset for "Deep-UV Emission From Highly-Ordered AlGaN/AlN Core-Shell Nanorods" |
Description | This dataset contains scanning electron microscopy (SEM) images, transmission electron microscopy (TEM) pictures and Catodoluminescence (CL) measurements carried out on AlN and AlGaN/AlN core-shell nanorod. The samples were fabricated via a hybrid top-down/bottom up approach. Displacement Talbot Lithography is used to fabricate Au/Ni metal dots to act as a hard etch mask. Ultrathin AlN nanorod arrays are created; thanks to a two-step dry-wet etching process with first, chlorine-based dry etching of an AlN template and second, KOH-based wet etching. AlN facet recovery and AlGaN quantum well growth is performed by Metal Organic Vapor Phase Epitaxy. TEM and CL were used to assess the structural, chemical and optical quality of the various nanorod samples. |
Type Of Material | Database/Collection of data |
Year Produced | 2018 |
Provided To Others? | Yes |
Title | Dataset for "Displacement Talbot Lithography for nano-engineering of III-nitride materials" |
Description | This dataset contains scanning electron microscopy (SEM) images of various nano-patterns. The nano-patterns are first created in the resist via Displacement Talbot Lithography. The nano-patterns in the resist are then used to create dielectric or metal mask, respectively via Inductively coupled plasma dry etching or lift-off. Finally, the masks are employed either for the bottom-up selective area growth (via metal organic vapour phase epitaxy) or for the top-down fabrication of nanostructures. A combination of top-down etching and bottom-up can also be employed. |
Type Of Material | Database/Collection of data |
Year Produced | 2019 |
Provided To Others? | Yes |
Title | Dataset for "Displacement Talbot Lithography: an alternative technique to fabricate nanostructured metamaterials" |
Description | This dataset contains scanning electron microscopy (SEM) secondary electron (SE) images of linear gratings resist, dashes and holes in resist that were obtained using Displacement Talbot lithography. These techniques were used to assess the dimensions of the resist features that were obtained with linear grating mask, using single or double exposure steps. SE images also shows the lift-off profile used in order to obtain metamaterial 'fishnet' like metallic structures. The dimensions of the measured linear gratings, dashes and holes are written in text files. |
Type Of Material | Database/Collection of data |
Year Produced | 2017 |
Provided To Others? | Yes |
Title | Dataset for "Influence of MOVPE environment on the selective area thermal etching of GaN nanohole arrays" |
Description | This dataset contains scanning electron microscopy (SEM) images of various selective area thermal etching (SATE) experiments. SiN circular nano-opening are created via Displacement Talbot Lithography and Inductively coupled plasma dry etching. Then thermal etching is performed for various conditions within a metal organic vapour phase epitaxy growth reactor to create highly organized GaN nanoholes. |
Type Of Material | Database/Collection of data |
Year Produced | 2020 |
Provided To Others? | Yes |
URL | https://researchdata.bath.ac.uk/id/eprint/726 |
Title | Dataset for "Optical properties and resonant cavity modes in axial InGaN/GaN nanotube microcavities" |
Description | This dataset contains scanning electron microscopy (SEM) images, Catodoluminescence (CL), MicroPL and Confocal PL measurements and Finite-Difference Time-Domain (FDTD) simulations carried out on InGaN/GaN nanotube microcavities. The samples were fabricated via a combination of Displacement Talbot Lithography for patterning and inductively coupled plasma top-down dry-etching. SEM imaging were used to assess first, the patterning of SiNx mask, and second, the InGaN/GaN nanotube morphology and dimensions. CL were used to assess the optical properties of individual InGaN/GaN nanotube. MicroPL and Confocal PL were used to carry out continuous excitation at room temperature of isolated InGaN/GaN nanotube. FDTD simulations were used to investigate the nature of the resonant modes. Correlation between PL techniques and FDTD simulation suggests that both mixed whispering gallery - Fabry-Perot cavity modes are observed within the single nanotube. |
Type Of Material | Database/Collection of data |
Year Produced | 2017 |
Provided To Others? | Yes |
Title | Dataset for "Understanding the resolution limit of Displacement Talbot Lithography" |
Description | Displacement Talbot lithography (DTL) is a new technique for patterning large areas with sub-micron periodic features with low cost. It has application in fields which cannot justify the cost of deep-UV photolithography such as plasmonics, photonic crystals, and metamaterials and competes with techniques such as nanoimprint and laser interference lithography. It is based on the interference of coherent light through a periodically patterned photomask. However, the factors affecting the resolution limit of the technique are unknown. Through computer simulations, we show the impact of the mask parameters on the size of the features that can be achieved and describe the separate figures of merit that should be optimised for successful patterning. Both amplitude and phase masks are considered for hexagonal and square arrays of openings on the mask. For large pitches, amplitude masks are shown to give the best resolution, whereas, for small pitches, phase masks are superior due to the shorter exposure time that is required. We also show how small changes in the mask pitch can dramatically affect the resolution achievable. As a result, this study provides important information for choosing new masks for DTL for targeted applications. This dataset is the result of a modelling but also experimental investigation of the DTL resolution for a specific resist and wavelength. The data was acquired using a Hitachi S-4300 scanning electron microscope (SEM), and a MATLAB code. |
Type Of Material | Database/Collection of data |
Year Produced | 2019 |
Provided To Others? | Yes |
URL | https://researchdata.bath.ac.uk/id/eprint/570 |
Title | Dataset for Structural and optical emission uniformity of m-plane InGaN single quantum wells in core-shell nanorods |
Description | This dataset contains the results of scanning electron microscopy (SEM), transmission electron microscopy (TEM) and Energy Dispersive X-ray (EDX) measurements carried out on InGaN/GaN core-shell nanostructures. The samples are highly regular arrays of GaN plasma etched cores onto which wide InGaN layer capped with a GaN layer were grown using different metal organic vapour phase epitaxy (MOVPE) growth parameters. Three different growth temperature were used to grow the InGaN layer: 750°C, 700°C and 650°C. SEM images were used to characterize the describe the fabrication, growth and assess nanorod morphologies. TEM were used to investigate the structural properties and assess the InGaN thickness along the entire length of the m-plane facets. EDX measurements were used to assess the homogeneity of the InGaN layer composition at different position along the m-plane facet and on the semi-polar facets. |
Type Of Material | Database/Collection of data |
Year Produced | 2016 |
Provided To Others? | Yes |
Title | Evolution of the m-plane Quantum Well Morphology and Composition within a GaN/InGaN Core-Shell Structure |
Description | This dataset contains the results of scanning electron microscopy (SEM), atomic force microscopy (AFM), transmission electron microscopy (TEM) Energy Dispersive X-ray (EDX) and Catodoluminescence (CL) measurements carried out on InGaN/GaN core-shell nanostructures. The samples are highly regular arrays of GaN etched cores onto which various InGaN layer thickness were grown using fixed metal organic vapour phase epitaxy (MOVPE) growth conditions. Three different growth time were used to grow InGaN layer with various thickness: 2min, 6min, and 18min, either with or without a GaN capping layer. SEM and AFM characterization techniques were used to assess the nanorod morphology and roughness of the lateral m-plane facets. TEM were used to investigate the structural properties and assess the InGaN thickness of the m-plane facets. EDX measurements were used to assess the InGaN layer composition of the m-plane facet. CL were used to assess the optical properties of each InGaN layer thickness. Correlation of SEM, AFM, TEM, EDX and CL allow to describe the and explain the growth mechanism of a thick InGaN shell grown on GaN NRs formed by combined top-down etching and regrowth. |
Type Of Material | Database/Collection of data |
Year Produced | 2016 |
Provided To Others? | Yes |
Title | Hybrid top-down/bottom-up fabrication of regular arrays of AlN nanorods for deep-UV core-shell LEDs: Dataset |
Description | This dataset contains scanning electron microscopy (SEM) images and Catodoluminescence (CL) measurements carried out on AlN nanorod. The samples were fabricated via a hybrid top-down/bottom up approach. Displacement Talbot Lithography is used to fabricate Au/Ni metal dots to act as a hard etch mask. AlN nanorod arrays are created by inductively coupled plasma dry etching of an AlN template. AlN facet recovery is performed by Metal Organic Vapor Phase Epitaxy regrowth. CL was used to assess the optical quality of the AlN nanorod. |
Type Of Material | Database/Collection of data |
Year Produced | 2017 |
Provided To Others? | Yes |
Description | Large area nanoengineered Si substrates for InP |
Organisation | Cardiff University |
Country | United Kingdom |
Sector | Academic/University |
PI Contribution | Development of processes and samples for further growth of semiconductor material. |
Collaborator Contribution | Growth of semiconductor material onto sample patterned by the University of Bath. |
Impact | No outputs yet. |
Start Year | 2019 |
Description | Nanopatterned solar cells |
Organisation | University of Cambridge |
Country | United Kingdom |
Sector | Academic/University |
PI Contribution | Nanopatterned solar cell samples for further processing in Cambridge |
Collaborator Contribution | Intellectual leadership, design expertise and further processing. |
Impact | "Ultra-thin photovoltaics with integrated nanophotonic light-trapping layer" Presentation at SPIE Photonics West Conference, March 2021. "Ultra-thin photovoltaics for radiation-tolerant space power systems" https://doi.org/10.1117/12.2583519 "Ultra-thin GaAs solar cells with nanophotonic metal-dielectric diffraction gratings fabricated with displacement Talbot lithography" https://doi.org/10.1002/pip.3463 |
Start Year | 2019 |
Description | Nanostructured UV LEDs |
Organisation | Leibniz Association |
Department | Ferdinand-Braun-Institut |
Country | Germany |
Sector | Academic/University |
PI Contribution | The nanostructuring capability developed as part of this grant has been used to create new LED devices for further processing at Ferdinand Braun Institute and Technical University Berlin. |
Collaborator Contribution | Our partners have used their semiconductor growth infrastructure to grow new structures in order to improve the emission properties. |
Impact | https://doi.org/10.1016/j.jcrysgro.2019.125343 https://doi.org/10.1093/micmic/ozad118 |
Start Year | 2017 |
Description | Nanostructured UV LEDs |
Organisation | Technical University Berlin |
Country | Germany |
Sector | Academic/University |
PI Contribution | The nanostructuring capability developed as part of this grant has been used to create new LED devices for further processing at Ferdinand Braun Institute and Technical University Berlin. |
Collaborator Contribution | Our partners have used their semiconductor growth infrastructure to grow new structures in order to improve the emission properties. |
Impact | https://doi.org/10.1016/j.jcrysgro.2019.125343 https://doi.org/10.1093/micmic/ozad118 |
Start Year | 2017 |
Description | Nanostructured templates for HVPE regrowth |
Organisation | University of Clermont Auvergne |
Country | France |
Sector | Academic/University |
PI Contribution | Prepared patterned samples and hosted a PhD researcher in our lab. |
Collaborator Contribution | Provided samples for patterning and performed subsequent regrowth. |
Impact | https://doi.org/10.1021/acs.cgd.3c00172 https://doi.org/10.1021/acs.cgd.2c01105 https://doi.org/10.1088/2399-1984/ab8450 |
Start Year | 2019 |
Description | Nanostructured templates for nanorod growth |
Organisation | University of Clermont Auvergne |
Country | France |
Sector | Academic/University |
PI Contribution | Preparation of patterned templates for further growth of semiconductor nanorods. |
Collaborator Contribution | Growth of semiconductor nanorods on the patterned templates provided by the University of Bath |
Impact | Mohammed Zeghouane et al 2020 Nano Futures 4 025002, https://doi.org/10.1088/2399-1984/ab8450 |
Start Year | 2019 |
Description | DWEA: Presentation to CIP |
Form Of Engagement Activity | A talk or presentation |
Part Of Official Scheme? | No |
Geographic Reach | Local |
Primary Audience | Industry/Business |
Results and Impact | A co-investigator visited a major UK photonics organisation to present our new equipment capability and to discuss further collaboration. |
Year(s) Of Engagement Activity | 2016 |
Description | ELB: EV Group pre-conference workshop (2015) |
Form Of Engagement Activity | A talk or presentation |
Part Of Official Scheme? | No |
Geographic Reach | International |
Primary Audience | Industry/Business |
Results and Impact | A member of the research group was invited to present a talk covering our work on nanostructured III-nitride materials at this industrial workshop as a result of our expertise in nanoimprint lithography. Around 30 participants were present from industry and academia throughout Europe. A conversation began at this event with a UK SME around a potential future collaboration. This was pursued following the event and the research group has been awarded an EPSRC Impact Acceleration Account grant to continue the collaboration. |
Year(s) Of Engagement Activity | 2015 |
URL | http://www.waveoptics.co.uk/ |
Description | ELB: Micro & Nano Engineering, The Hague, Sept. 2015 |
Form Of Engagement Activity | Participation in an activity, workshop or similar |
Part Of Official Scheme? | No |
Geographic Reach | International |
Primary Audience | Professional Practitioners |
Results and Impact | Poster presentation at this international conference. |
Year(s) Of Engagement Activity | 2015 |
URL | http://mne2015.org/ |
Description | ELB: UKNC Annual Conference |
Form Of Engagement Activity | A talk or presentation |
Part Of Official Scheme? | No |
Geographic Reach | National |
Primary Audience | Professional Practitioners |
Results and Impact | Poster presentation outlined the latest results that we have obtained using the new equipment purchased through our EPSRC equipment grant. This generated interest at the meeting and raised awareness of the new capability. |
Year(s) Of Engagement Activity | 2016 |
URL | http://www.uknc.org/ |
Description | PAS: 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Bellevue, Washington, USA, 7th-12th July 2019 |
Form Of Engagement Activity | A talk or presentation |
Part Of Official Scheme? | No |
Geographic Reach | International |
Primary Audience | Professional Practitioners |
Results and Impact | Talk title: 'Towards electrically injected UV core-shell structure' |
Year(s) Of Engagement Activity | 2019 |
Description | PAS: Poster at 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Bellevue, Washington, USA, 7th-12th July 2019 |
Form Of Engagement Activity | A talk or presentation |
Part Of Official Scheme? | No |
Geographic Reach | International |
Primary Audience | Professional Practitioners |
Results and Impact | Poster presentation on "Displacement Talbot Lithography for nano-engineering of III-nitride materials" |
Year(s) Of Engagement Activity | 2019 |
Description | PC - Poster presentation at the Micro and Nanoscale Engineering conference (MNE2017) |
Form Of Engagement Activity | A talk or presentation |
Part Of Official Scheme? | No |
Geographic Reach | International |
Primary Audience | Professional Practitioners |
Results and Impact | Poster presentation on the topic of "Understanding the resolution limit of Displacement Talbot Lithography." Useful discussions of the results followed. |
Year(s) Of Engagement Activity | 2017 |
URL | http://mne2017.org/ |
Description | PC - Poster presentation at the Micro and Nanoscale Engineering conference (MNE2018) |
Form Of Engagement Activity | A talk or presentation |
Part Of Official Scheme? | No |
Geographic Reach | International |
Primary Audience | Professional Practitioners |
Results and Impact | Title: Nano-engineering of III-Nitride materials. |
Year(s) Of Engagement Activity | 2018 |
URL | http://mne2018.org/ |
Description | PC - Talk at UK Semiconductor conference, Sheffield, July 2018 |
Form Of Engagement Activity | A talk or presentation |
Part Of Official Scheme? | No |
Geographic Reach | National |
Primary Audience | Professional Practitioners |
Results and Impact | Talk title: "Double Displacement Talbot Lithography: a new approach periodic nanostructure patterning" |
Year(s) Of Engagement Activity | 2018 |
URL | https://uksemiconductors.com/?page_id=1516 |
Description | PC SPIE Advanced Lithography conference |
Form Of Engagement Activity | A talk or presentation |
Part Of Official Scheme? | No |
Geographic Reach | International |
Primary Audience | Professional Practitioners |
Results and Impact | Conference presentation |
Year(s) Of Engagement Activity | 2018 |
URL | http://spie.org/conferences-and-exhibitions/advanced-lithography?SSO=1 |
Description | PC: CMP-CDT annual conference, Sept 2019, Bristol |
Form Of Engagement Activity | A talk or presentation |
Part Of Official Scheme? | No |
Geographic Reach | Regional |
Primary Audience | Postgraduate students |
Results and Impact | Poster on 'Nano-engineering of III-Nitride materials' |
Year(s) Of Engagement Activity | 2019 |
Description | PC: Talk at META 2019 (July 2019), Portugal |
Form Of Engagement Activity | A talk or presentation |
Part Of Official Scheme? | No |
Geographic Reach | International |
Primary Audience | Professional Practitioners |
Results and Impact | Talk on 'Large area fabrication of complex periodic nanostructures by 'Double Displacement Talbot Lithography': Fundamentals and applications' |
Year(s) Of Engagement Activity | 2019 |
Description | PMC - China-UK workshop - Sheffield, UK |
Form Of Engagement Activity | A talk or presentation |
Part Of Official Scheme? | No |
Geographic Reach | International |
Primary Audience | Professional Practitioners |
Results and Impact | Talk title: Nano-engineering of III-Nitride materials |
Year(s) Of Engagement Activity | 2018 |
Description | PMC - Conference talk at the EMN workshop on Epitaxy on MOCVD / Epitaxy on Nanomaterials |
Form Of Engagement Activity | A talk or presentation |
Part Of Official Scheme? | No |
Geographic Reach | International |
Primary Audience | Professional Practitioners |
Results and Impact | Conference talk on the topic of "Combining top-down etching and MOVPE regrowth: a hybrid approach to nano-engineer III-Nitrides for visible and deep-UV light-emitting devices" |
Year(s) Of Engagement Activity | 2017 |
URL | http://emnmeeting.org/2018/barcelona/ |
Description | PMC - International Workshop on Nitride semiconductors (IWN) 2018 - Kanazawa, Japan |
Form Of Engagement Activity | A talk or presentation |
Part Of Official Scheme? | No |
Geographic Reach | International |
Primary Audience | Professional Practitioners |
Results and Impact | Talk title: Displacement Talbot Lithography for nano-engineering of III-Nitride materials |
Year(s) Of Engagement Activity | 2018 |
Description | PMC - UK Nitrides Consortium (UKNC) winter conference 2018 - Manchester, UK |
Form Of Engagement Activity | A talk or presentation |
Part Of Official Scheme? | No |
Geographic Reach | National |
Primary Audience | Professional Practitioners |
Results and Impact | Talk title: Hybrid top-down/bottom up fabrication of regular arrays of AlN/AlGaN core-shell nanorods for deep-UV emission |
Year(s) Of Engagement Activity | 2018 |
Description | PMC - UK Nitrides Consortium (UKNC) winter conference 2019 - Strathclyde, UK |
Form Of Engagement Activity | A talk or presentation |
Part Of Official Scheme? | No |
Geographic Reach | National |
Primary Audience | Professional Practitioners |
Results and Impact | Talk title: Highly-organised selective-area sublimation of GaN nanostructures for directional emission |
Year(s) Of Engagement Activity | 2019 |
Description | PMC - conference talk at the 11th International Symposium on Semiconductor Light Emitting Devices |
Form Of Engagement Activity | A talk or presentation |
Part Of Official Scheme? | No |
Geographic Reach | International |
Primary Audience | Professional Practitioners |
Results and Impact | Conference talk on the topic of "Hybrid top-down/bottom up fabrication of regular arrays of AlN/AlGaN core-shell nanorods for UV emission" stimulating discussion of the results. |
Year(s) Of Engagement Activity | 2017 |
URL | http://www.ece.umich.edu/issled2017/ |
Description | PMC poster presentation at the 12th International Conference on Nitride Semiconductors |
Form Of Engagement Activity | A talk or presentation |
Part Of Official Scheme? | No |
Geographic Reach | International |
Primary Audience | Professional Practitioners |
Results and Impact | Poster presentation that allowed discussion of results with interested researchers. Title of poster: "Hybrid top-down/bottom up fabrication of regular arrays of AlN/AlGaN core-shell nanorods for UV emission" |
Year(s) Of Engagement Activity | 2017 |
URL | https://www.european-mrs.com/meetings/archives/2017/icns-12-12th-international-conference-nitride-se... |
Description | PS - Talk at the SPIE Nanotechnology VIII conference |
Form Of Engagement Activity | A talk or presentation |
Part Of Official Scheme? | No |
Geographic Reach | International |
Primary Audience | Professional Practitioners |
Results and Impact | Talk entitled "Fabrication and optical properties of InGaN/GaN nanotube for cavity based laser" |
Year(s) Of Engagement Activity | 2017 |
URL | http://spie.org/conferences-and-exhibitions/past-conferences-and-exhibitions/microtechnologies-2017 |
Description | PS - Talk at the SPIE Nanotechnology VIII conference |
Form Of Engagement Activity | A talk or presentation |
Part Of Official Scheme? | No |
Geographic Reach | International |
Primary Audience | Professional Practitioners |
Results and Impact | Conference talk on the topic of "Displacement Talbot Lithography: an alternative technique to fabricate nanostructured metamaterials". |
Year(s) Of Engagement Activity | 2017 |
URL | http://spie.org/conferences-and-exhibitions/past-conferences-and-exhibitions/microtechnologies-2017 |
Description | PS - poster presentation at the 12th International Conference on Nitride Semiconductors |
Form Of Engagement Activity | A talk or presentation |
Part Of Official Scheme? | No |
Geographic Reach | International |
Primary Audience | Professional Practitioners |
Results and Impact | Poster presentation to allow discussion of research results: Title of poster: "Design and fabrication of Gallium Nitride grating couplers using Displacement Talbot Lithography" |
Year(s) Of Engagement Activity | 2017 |
URL | https://www.european-mrs.com/meetings/archives/2017/icns-12-12th-international-conference-nitride-se... |
Description | PS: Nanoscience seminar (Feb 2015) |
Form Of Engagement Activity | A talk or presentation |
Part Of Official Scheme? | No |
Geographic Reach | Local |
Primary Audience | Postgraduate students |
Results and Impact | A seminar was given to the Department of Physics Nanoscience group covering the research and equipment covered by these awards. Questions and discussion followed. |
Year(s) Of Engagement Activity | 2016 |
URL | https://wiki.bath.ac.uk/display/NAN/Nanoseminars |
Description | RA: UK Nitrides Consortium, Jan 2022, online |
Form Of Engagement Activity | A talk or presentation |
Part Of Official Scheme? | No |
Geographic Reach | National |
Primary Audience | Professional Practitioners |
Results and Impact | Talk title: Sculpturing of AlN nanostructures to realise sites for quantum dots |
Year(s) Of Engagement Activity | 2022 |
URL | http://uknc2022.iopconfs.org/Programme |