Ultra-Stable High-Performance Single Nanolasers
Lead Research Organisation:
University of Sheffield
Department Name: Electronic and Electrical Engineering
Abstract
Abstracts are not currently available in GtR for all funded research. This is normally because the abstract was not required at the time of proposal submission, but may be because it included sensitive information such as personal details.
Publications

Amano H
(2020)
The 2020 UV emitter roadmap

Athanasiou M
(2017)
Polarized white light from hybrid organic/III-nitrides grating structures.
in Scientific reports

Athanasiou M
(2017)
Monolithically multi-color lasing from an InGaN microdisk on a Si substrate
in Scientific Reports

Bai J
(2020)
A Direct Epitaxial Approach To Achieving Ultrasmall and Ultrabright InGaN Micro Light-Emitting Diodes (µLEDs).
in ACS photonics



Bruckbauer J
(2020)
Luminescence behavior of semipolar (101¯1) InGaN/GaN "bow-tie" structures on patterned Si substrates
in Journal of Applied Physics

Cai Y
(2019)
Overgrowth and characterization of (11-22) semi-polar GaN on (113) silicon with a two-step method
in Semiconductor Science and Technology

Cai Y
(2021)
Monolithically Integrated µ LEDs/HEMTs Microdisplay on a Single Chip by a Direct Epitaxial Approach
in Advanced Materials Technologies

Cai Y
(2021)
Direct Epitaxial Approach to Achieve a Monolithic On-Chip Integration of a HEMT and a Single Micro-LED with a High-Modulation Bandwidth.
in ACS applied electronic materials
Description | Establish conductivity selective etching process for the fabrication of lattice-mismatched DBR, one of the key steps towards the fabrication of nanolaser. So far, we have demonstrated a DBR with a high reflective of >99% and a wide stop-band. In combination with another new idea, we are aiming to develop a new kind of laser in collaboration with another UK university who is working on a design. This could be used for quantum information/computer area. Sub-micron direct-write laser photolithography below the diffraction limit has been demonstrated using a high-resolution confocal photoluminescence microscopy system, a single instrument capable of both fabricating and characterizing III-nitride nano-photonics. The resulting minimum 145 nm feature size have been achieved through a combination of the non-linearity in direct-write photolithography and development rate. Develop a novel selective overgrowth approach to achieving micro emitters on micro-patterned substrates, demonstrating a record efficiency of microLEDs with a size of down to 3.6 micrometer. This method has been further extended to achieve VCSEL laser arrays with a size of down to a few micrometers. |
Exploitation Route | A number of publications have drawn considerable attention from scientific community, and then hopefully will be used worldwide. Further grant application will be planed. The paper "Ultra-small, ultra-compact and ultra-high efficient InGaN micro light emitting diodes (µLEDs) with narrow spectra linewidth", ACS Nano 14, 6906-6911 (2020), published on 26th May 2020, has received >2400 view so far; The paper "A direct epitaxial approach to achieving ultra-small and ultra-bright InGaN-based micro light emitting diodes (µLEDs)", ACS Photonics 7, 411-415 (2020), published on 10th January 2020, has received >2700 view so far. Part of the results will be transferred to the University's spinout, EpiPix. |
Sectors | Digital/Communication/Information Technologies (including Software) Electronics Energy Manufacturing including Industrial Biotechology |
Description | A MOU was signed between the Unversity of Sheffield and Universiti Sains Malaysia in order to initiate A Networking On Nitrides Semiconductor Optoelectronics And Electronics |
Organisation | University of Science Malaysia |
Country | Malaysia |
Sector | Academic/University |
PI Contribution | The Sheffield GaN center led by Professor Tao Wang has established an internationally recognized reputation in the field of III-nitride opto-electronics, ranging from epitaxial growth, through material characterization to device fabrication. |
Collaborator Contribution | The team at Universiti Sains Malaysia has good experience in technology commercializing. Therefore, both team aims at enhancing academic exchange and cooperation in this field |
Impact | The MOU was just signed several weeks ago. Hopefully, we will have results soon |
Start Year | 2019 |
Title | DBR Enhanced micro-LEDs |
Description | DBR Enhanced micro-LEDs |
IP Reference | UK Patent Application No. 1910352.2, |
Protection | Patent application published |
Year Protection Granted | 2019 |
Licensed | Commercial In Confidence |
Impact | Awaiting impact |
Title | LED arrays |
Description | A new method for the growth of micro-LED arrays |
IP Reference | GB1816455.8 |
Protection | Patent application published |
Year Protection Granted | 2018 |
Licensed | Commercial In Confidence |
Impact | Major impact on developing III-nitride based microLEDs for micro-display, Ultra-fast visible light communications, AR/VR |
Title | multiple-colored Micro-LEDs |
Description | multiple-colored Micro-LEDs |
IP Reference | UK Patent Application No. 1910348.0, 19th July 2019 |
Protection | Patent application published |
Year Protection Granted | 2019 |
Licensed | Commercial In Confidence |
Impact | awaiting impact |
Description | 2020 Industrial open day |
Form Of Engagement Activity | A formal working group, expert panel or dialogue |
Part Of Official Scheme? | No |
Geographic Reach | National |
Primary Audience | Industry/Business |
Results and Impact | It aims to establish new collaboration with industry and further strengthen existing collaboration with industry, and to support the UK advanced manufacturing. |
Year(s) Of Engagement Activity | 2020 |
Description | LJ: UKNC Annual Conference |
Form Of Engagement Activity | A talk or presentation |
Part Of Official Scheme? | No |
Geographic Reach | National |
Primary Audience | Professional Practitioners |
Results and Impact | The presentation reported out latest results on significantly improving crystal quality of our nonpolar GaN on sapphire. This generic approach can be used for a wide range of applications from photonics to electronics and also in a wide spectral region including UV devices. It is expected to draw strong attention from industry and academic areas |
Year(s) Of Engagement Activity | 2017 |
Description | SJ: UKNC Annual Conference |
Form Of Engagement Activity | A talk or presentation |
Part Of Official Scheme? | No |
Geographic Reach | National |
Primary Audience | Postgraduate students |
Results and Impact | The presentation reported out latest results on developing a new method to achieve GaN power electronics approaching its intrinsic limits. It is expected to draw strong attention from industry and academic areas |
Year(s) Of Engagement Activity | 2020 |
Description | TW: 2017 industrial event/open day |
Form Of Engagement Activity | A formal working group, expert panel or dialogue |
Part Of Official Scheme? | No |
Geographic Reach | National |
Primary Audience | Professional Practitioners |
Results and Impact | The event has attracted more than 10 CEOs from the UK industrial companies. All the new technological breakthroughs developed through the projects have been presented. It is expected that it will make major impact on industry. |
Year(s) Of Engagement Activity | 2017 |
Description | TW: 2019 Industrial open day |
Form Of Engagement Activity | A formal working group, expert panel or dialogue |
Part Of Official Scheme? | No |
Geographic Reach | National |
Primary Audience | Industry/Business |
Results and Impact | It aims to establish new collaboration with industry and further strengthen existing collaboration with industry, and to support the UK advanced manufacturing. |
Year(s) Of Engagement Activity | 2019 |
Description | XY: 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Bellevue, Washington, USA, 7th-12th July 2019 |
Form Of Engagement Activity | A talk or presentation |
Part Of Official Scheme? | No |
Geographic Reach | International |
Primary Audience | Other audiences |
Results and Impact | The presentation report on design and then fabrication of Semi-Polar (11-22) GaN for Green Emitters on Si Substrates. It is expected to draw strong attention from industry. |
Year(s) Of Engagement Activity | 2019 |
Description | XZ: UKNC Annual Conference |
Form Of Engagement Activity | A talk or presentation |
Part Of Official Scheme? | No |
Geographic Reach | National |
Primary Audience | Postgraduate students |
Results and Impact | The presentation reported out latest results on developing semi-polar InGaN-based green LEDs with super-lattice on patterned silicon. It is expected to draw strong attention from industry and academic areas |
Year(s) Of Engagement Activity | 2020 |
Description | YC: 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Bellevue, Washington, USA, 7th-12th July 2019 |
Form Of Engagement Activity | A talk or presentation |
Part Of Official Scheme? | No |
Geographic Reach | International |
Primary Audience | Other audiences |
Results and Impact | The presentation reports design and then fabrication of Monolithic On-Chip Integration of HEMTs/Green LEDs. The results provided a new direction to move forward developing a new prototype optoelectronics. It is expected to draw strong attention from industry. |
Year(s) Of Engagement Activity | 2019 |
Description | YC: UKNC Annual Conference |
Form Of Engagement Activity | A talk or presentation |
Part Of Official Scheme? | No |
Geographic Reach | National |
Primary Audience | Postgraduate students |
Results and Impact | The presentation reported out latest results on developing Superior performance metal-semiconductor-metal photodiode on non-polar (11-20) GaN with patterned (110) silicon. It is expected to draw strong attention from industry and academic areas |
Year(s) Of Engagement Activity | 2020 |
Description | YNH: UKNC Annual Conference |
Form Of Engagement Activity | A talk or presentation |
Part Of Official Scheme? | No |
Geographic Reach | National |
Primary Audience | Professional Practitioners |
Results and Impact | The presentation reported our latest report on the fabrication of GaN based nanoporous structures. This results can be extended to many other areas in addition to solar hydrogen generation, such as nanolasers with a DBR structure in order to enhance optical confinement factor. It is expected to draw strong attention from industry. |
Year(s) Of Engagement Activity | 2017 |
Description | YPG: 2018 UKNC winter Conference |
Form Of Engagement Activity | A talk or presentation |
Part Of Official Scheme? | No |
Geographic Reach | National |
Primary Audience | Professional Practitioners |
Results and Impact | The presentations reported a new prototype of white LEDs using our patterned non-polar GaN. It is expected that this type of white LEDs will draw attention from both industry and academia. |
Year(s) Of Engagement Activity | 2018 |
Description | YZ: 12th international conference on nitride semiconductors |
Form Of Engagement Activity | A talk or presentation |
Part Of Official Scheme? | No |
Geographic Reach | International |
Primary Audience | Professional Practitioners |
Results and Impact | The presentation reported on our new progress on developing semipolar GaN on patterned substrates. This approach is generic, and can be used for a wide range of applications including LEDs and LDs and also nanodevices such as nanolasers. It is expected to draw strong attention from industry. |
Year(s) Of Engagement Activity | 2017 |