Ultra-Stable High-Performance Single Nanolasers

Lead Research Organisation: University of Sheffield
Department Name: Electronic and Electrical Engineering

Abstract

Abstracts are not currently available in GtR for all funded research. This is normally because the abstract was not required at the time of proposal submission, but may be because it included sensitive information such as personal details.

Publications

10 25 50
 
Description Establish conductivity selective etching process for the fabrication of lattice-mismatched DBR, one of the key steps towards the fabrication of nanolaser. So far, we have demonstrated a DBR with a high reflective of >99% and a wide stop-band. In combination with another new idea, we are aiming to develop a new kind of laser in collaboration with another UK university who is working on a design. This could be used for quantum information/computer area.

Sub-micron direct-write laser photolithography below the diffraction limit has been demonstrated using a high-resolution confocal photoluminescence microscopy system, a single instrument capable of both fabricating and characterizing III-nitride nano-photonics. The resulting minimum 145 nm feature size have been achieved through a combination of the non-linearity in direct-write photolithography and development rate.

Develop a novel selective overgrowth approach to achieving micro emitters on micro-patterned substrates, demonstrating a record efficiency of microLEDs with a size of down to 3.6 micrometer. This method has been further extended to achieve VCSEL laser arrays with a size of down to a few micrometers.
Exploitation Route A number of publications have drawn considerable attention from scientific community, and then hopefully will be used worldwide. Further grant application will be planed. The paper "Ultra-small, ultra-compact and ultra-high efficient InGaN micro light emitting diodes (µLEDs) with narrow spectra linewidth", ACS Nano 14, 6906-6911 (2020), published on 26th May 2020, has received >2400 view so far; The paper "A direct epitaxial approach to achieving ultra-small and ultra-bright InGaN-based micro light emitting diodes (µLEDs)", ACS Photonics 7, 411-415 (2020), published on 10th January 2020, has received >2700 view so far.

Part of the results will be transferred to the University's spinout, EpiPix.
Sectors Digital/Communication/Information Technologies (including Software),Electronics,Energy,Manufacturing, including Industrial Biotechology

 
Description The relevant processes for the fabrication of lattice-mismatched DBRs can be widely used for different purposes, such as enhancing extraction efficiency of emitters. In combination with a new idea which is related to surface plasmon effect, a new type of laser can be made in collaboration with another UK university team who is working on a laser design. A new grant application in collaboration with Harvard, MIT, Strathclyde and Bath is under preparation. The new grant is based on part of the results achieved by the project as preliminary work. Part of the results will be transferred to a spinout. Part of the sub-micron direct-write laser photolithography below the diffraction limit can be used for the fabrication of micro or nano devices, potentially leading to a new patent. Develop a novel selective overgrowth approach to achieving micro emitters on patterned substrates, demonstrating a record efficiency of microLEDs with a size of down to 3.6 micrometer. This method has been further extended to achieve VCSEL laser arrays with a size of down to a few micrometers.
Sector Digital/Communication/Information Technologies (including Software),Electronics,Energy,Healthcare,Manufacturing, including Industrial Biotechology
Impact Types Cultural,Societal,Economic,Policy & public services

 
Description A MOU was signed between the Unversity of Sheffield and Universiti Sains Malaysia in order to initiate A Networking On Nitrides Semiconductor Optoelectronics And Electronics 
Organisation University of Science Malaysia
Country Malaysia 
Sector Academic/University 
PI Contribution The Sheffield GaN center led by Professor Tao Wang has established an internationally recognized reputation in the field of III-nitride opto-electronics, ranging from epitaxial growth, through material characterization to device fabrication.
Collaborator Contribution The team at Universiti Sains Malaysia has good experience in technology commercializing. Therefore, both team aims at enhancing academic exchange and cooperation in this field
Impact The MOU was just signed several weeks ago. Hopefully, we will have results soon
Start Year 2019
 
Title DBR Enhanced micro-LEDs 
Description DBR Enhanced micro-LEDs 
IP Reference UK Patent Application No. 1910352.2, 
Protection Patent application published
Year Protection Granted 2019
Licensed Commercial In Confidence
Impact Awaiting impact
 
Title LED arrays 
Description A new method for the growth of micro-LED arrays 
IP Reference GB1816455.8 
Protection Patent application published
Year Protection Granted 2018
Licensed Commercial In Confidence
Impact Major impact on developing III-nitride based microLEDs for micro-display, Ultra-fast visible light communications, AR/VR
 
Title multiple-colored Micro-LEDs 
Description multiple-colored Micro-LEDs 
IP Reference UK Patent Application No. 1910348.0, 19th July 2019 
Protection Patent application published
Year Protection Granted 2019
Licensed Commercial In Confidence
Impact awaiting impact
 
Description 2020 Industrial open day 
Form Of Engagement Activity A formal working group, expert panel or dialogue
Part Of Official Scheme? No
Geographic Reach National
Primary Audience Industry/Business
Results and Impact It aims to establish new collaboration with industry and further strengthen existing collaboration with industry, and to support the UK advanced manufacturing.
Year(s) Of Engagement Activity 2020
 
Description LJ: UKNC Annual Conference 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach National
Primary Audience Professional Practitioners
Results and Impact The presentation reported out latest results on significantly improving crystal quality of our nonpolar GaN on sapphire. This generic approach can be used for a wide range of applications from photonics to electronics and also in a wide spectral region including UV devices. It is expected to draw strong attention from industry and academic areas
Year(s) Of Engagement Activity 2017
 
Description SJ: UKNC Annual Conference 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach National
Primary Audience Postgraduate students
Results and Impact The presentation reported out latest results on developing a new method to achieve GaN power electronics approaching its intrinsic limits. It is expected to draw strong attention from industry and academic areas
Year(s) Of Engagement Activity 2020
 
Description TW: 2017 industrial event/open day 
Form Of Engagement Activity A formal working group, expert panel or dialogue
Part Of Official Scheme? No
Geographic Reach National
Primary Audience Professional Practitioners
Results and Impact The event has attracted more than 10 CEOs from the UK industrial companies. All the new technological breakthroughs developed through the projects have been presented. It is expected that it will make major impact on industry.
Year(s) Of Engagement Activity 2017
 
Description TW: 2019 Industrial open day 
Form Of Engagement Activity A formal working group, expert panel or dialogue
Part Of Official Scheme? No
Geographic Reach National
Primary Audience Industry/Business
Results and Impact It aims to establish new collaboration with industry and further strengthen existing collaboration with industry, and to support the UK advanced manufacturing.
Year(s) Of Engagement Activity 2019
 
Description XY: 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Bellevue, Washington, USA, 7th-12th July 2019 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach International
Primary Audience Other audiences
Results and Impact The presentation report on design and then fabrication of Semi-Polar (11-22) GaN for Green Emitters on Si Substrates. It is expected to draw strong attention from industry.
Year(s) Of Engagement Activity 2019
 
Description XZ: UKNC Annual Conference 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach National
Primary Audience Postgraduate students
Results and Impact The presentation reported out latest results on developing semi-polar InGaN-based green LEDs with super-lattice on patterned silicon. It is expected to draw strong attention from industry and academic areas
Year(s) Of Engagement Activity 2020
 
Description YC: 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Bellevue, Washington, USA, 7th-12th July 2019 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach International
Primary Audience Other audiences
Results and Impact The presentation reports design and then fabrication of Monolithic On-Chip Integration of HEMTs/Green LEDs. The results provided a new direction to move forward developing a new prototype optoelectronics. It is expected to draw strong attention from industry.
Year(s) Of Engagement Activity 2019
 
Description YC: UKNC Annual Conference 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach National
Primary Audience Postgraduate students
Results and Impact The presentation reported out latest results on developing Superior performance metal-semiconductor-metal photodiode on non-polar (11-20) GaN with patterned (110) silicon. It is expected to draw strong attention from industry and academic areas
Year(s) Of Engagement Activity 2020
 
Description YNH: UKNC Annual Conference 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach National
Primary Audience Professional Practitioners
Results and Impact The presentation reported our latest report on the fabrication of GaN based nanoporous structures. This results can be extended to many other areas in addition to solar hydrogen generation, such as nanolasers with a DBR structure in order to enhance optical confinement factor. It is expected to draw strong attention from industry.
Year(s) Of Engagement Activity 2017
 
Description YPG: 2018 UKNC winter Conference 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach National
Primary Audience Professional Practitioners
Results and Impact The presentations reported a new prototype of white LEDs using our patterned non-polar GaN. It is expected that this type of white LEDs will draw attention from both industry and academia.
Year(s) Of Engagement Activity 2018
 
Description YZ: 12th international conference on nitride semiconductors 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach International
Primary Audience Professional Practitioners
Results and Impact The presentation reported on our new progress on developing semipolar GaN on patterned substrates. This approach is generic, and can be used for a wide range of applications including LEDs and LDs and also nanodevices such as nanolasers. It is expected to draw strong attention from industry.
Year(s) Of Engagement Activity 2017