Monolithic On-chip Integration of Electronics & Photonics Using III-nitrides for Telecoms
Lead Research Organisation:
CARDIFF UNIVERSITY
Department Name: School of Physics and Astronomy
Abstract
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Organisations
Publications
Anyebe E
(2020)
Recent advances in the Van der Waals epitaxy growth of III-V semiconductor nanowires on graphene
in Nano Select
| Description | III-Nitrides semiconductors research primarily confined to visible spectral band 350 to 750 nm focused on the emitters (light-emitting diodes, lasers, single photon emitters) and detectors (photodiodes, avalanche photodiodes, single-photon avalanche photodiodes). This project's development pathway is to realise infrared room-temperature emitters and detectors of III-Nitride monolithically integrated into Silicon. The overarching epitaxial challenge is to develop an alloy of InGaN which can operate beyond 750nm (near-infrared III-Nitrides), which is not possible with the industrially established technique of Metal-Organic Chemical Vapor Deposition (MOCVD). The Molecular Beam epitaxy (MBE) technique is the only suitable alternative method to epitaxially grow InGaN alloy with low Ga content (less than 10% Ga). This project uses plasma-assisted MBE (PA-MBE) to develop an InGaN alloy with low Ga content (Ga% between 10-30%). We have surveyed for reports on two Ga containing InGaN with Gallium composition between 10-30%; no experimental evidence has been reported yet; mostly, theoretical simulations have been reported. We have reviewed and compiled all available information we intend to publish as a review article. This will include our experimental findings, which have been published in peer-reviewed journals. Based on our past and present, we optimised growth conditions (temperature, metal fluxes) conditions to grow GaN, InN and Indium (In) Gallium (Ga) nitride (N) nanowires (NW), thin films, quantum wells, and diodes with varied Ga composition (10-30%) on a silicon substrate. • New or improved research methods or skills developed. We have successfully formed NWs, QWs, and thin films of InGaN with low Ga compositions. We are now trying to improve the optical and structural quality of low Ga-containing InGaN and the novel InGaN/InGaN, InN/GaN superlattice. • Significant new knowledge generated; We have identified defect-free GaN and InGaN nanoporous and nanostructures which are optical brighter than conventional thin films and nanowires • Important new research questions opened up; Why are spontaneously grown nanoporous thin film/nanostructures optically brighter than NW and thin films? Why are these structures defect-free? What is the driving growth mechanism behind the formation? Can these be engineered to form emitters and detectors? Can they provide flexibility to control the material's polarity (cubic instead of Wurtzite), In/Ga alloying? |
| Exploitation Route | The findings on the low Ga-containing InGaN alloys will lead to the development of efficient defect-free infrared III-Nitride semiconductor devices, which will eventually lead to efficient telecom optoelectronic devices (emitters and detectors) operating at room temperature in the near-infrared (NIR) spectrum. These novel findings can be used to develop single-photon emitters and single-photon avalanche photodetectors desired for quantum computers, LIDAR, and QKD. |
| Sectors | Aerospace Defence and Marine Electronics Energy |
| Description | Are we living in future of our forefathers? |
| Form Of Engagement Activity | A talk or presentation |
| Part Of Official Scheme? | No |
| Geographic Reach | Regional |
| Primary Audience | Public/other audiences |
| Results and Impact | The event was attended by more than 100 pupils (children, teachers and the general public). The event name - "Technology Behind Your Technology", was hosted by Cardiff Commitment, a Cardiff Council-led initiative (across Economic Development and Education) that works in partnership with the public, private and third sectors to develop provisions and opportunities for schools and young people across Cardiff, linked to our growth sectors. They are developing an activity for Sixth Forms in Cardiff related to the Semiconductor Sector that will support the recruitment of 16-18-year-olds onto a Semiconductor Skills boot camp. The outcomes were questions on compound semiconductor future, industry role, how to get jobs in this sector, and what are the future pathways. |
| Year(s) Of Engagement Activity | 2024 |
| URL | https://cardiffcommitment.co.uk/index.php/en/news-events |
| Description | Are we living in the future of our forefathers |
| Form Of Engagement Activity | A talk or presentation |
| Part Of Official Scheme? | No |
| Geographic Reach | Local |
| Primary Audience | Schools |
| Results and Impact | In the audience, there were around 50 pupils comprising of (GCSE and A level) students and teachers, Llanwern High School, Newport. The students were very engaging and asked several questions on the future pathways towards the career in compound semiconductors and pathways to jobs. |
| Year(s) Of Engagement Activity | 2023 |
| Description | School Visit - Howell's School, Cardiff |
| Form Of Engagement Activity | A talk or presentation |
| Part Of Official Scheme? | No |
| Geographic Reach | Regional |
| Primary Audience | Schools |
| Results and Impact | It was a college lecture (science talk) for years 11-12. There will be 20-25 students and teachers. The presentation drove the audience's curiosity to ask questions, leading to discussions on compound semiconductors. In the news article section of the school webpage, the impact of the presentation has generated interest among the science and non-science audience. |
| Year(s) Of Engagement Activity | 2023 |
| URL | https://www.howellscoedcollege.gdst.net/news-article/college-lecture--dr-manoj-kesaria |
| Description | The Technology behind our technology |
| Form Of Engagement Activity | A talk or presentation |
| Part Of Official Scheme? | No |
| Geographic Reach | Local |
| Primary Audience | Schools |
| Results and Impact | There were around 30 audience comprising A-level students and teachers at Howells School Cardiff. The talk led to several questions and interest in what are the next career pathways in compound semiconductor. |
| Year(s) Of Engagement Activity | 2025 |