Buffer design for improved GaN RF and power electronic devices

Lead Research Organisation: University of Bristol
Department Name: Physics


GaN HEMTs are a transforming new technology which revolutionizes the communication and radar market. They, however, require a detailed management of buffer and surface traps; the latter can nowadays easily be controlled and managed, the challenges lie in the epitaxy of the semiconductor structure. We will characterize new epitaxy of GaN devices and will using experimental techhniques Bristol pioneered such as backbiasing gain insight into the nature and location of the electronic traps. This will be complemented by the development of new experimental techniques. The experimental results will be linked to device and materials simulations and enable the next generation of devices.


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Yang F (2020) The Impact of Hot Electrons and Self-Heating During Hard-Switching in AlGaN/GaN HEMTs in IEEE Transactions on Electron Devices

Studentship Projects

Project Reference Relationship Related To Start End Student Name
EP/R51245X/1 01/10/2017 30/09/2021
1955855 Studentship EP/R51245X/1 01/10/2017 30/09/2021 Feiyuan Yang Yang
Description 1. Hard- and Soft-Switching properties of power GaN HEMTs have been investigated which reveals the impact of surface and buffer effects. A detailed paper has been published on this topic.
2. The correlations between buffer traps, electrical fields and the electroluminescence (EL) inside power GaN HEMTs have been studied which help us to get a better understanding of the buffer effect. We aim to publish it in the near future.
Exploitation Route 1. My work focused on the surface and buffer effects of power GaN HEMTs, and it may help the industry to develop the new electronic devices.
2. My work will help the academic society to get a better understanding of electrical phenomena appearing in GaN HEMTs.
Sectors Electronics