Buffer design for improved GaN RF and power electronic devices

Lead Research Organisation: University of Bristol
Department Name: Physics


GaN HEMTs are a transforming new technology which revolutionizes the communication and radar market. They, however, require a detailed management of buffer and surface traps; the latter can nowadays easily be controlled and managed, the challenges lie in the epitaxy of the semiconductor structure. We will characterize new epitaxy of GaN devices and will using experimental techhniques Bristol pioneered such as backbiasing gain insight into the nature and location of the electronic traps. This will be complemented by the development of new experimental techniques. The experimental results will be linked to device and materials simulations and enable the next generation of devices.


10 25 50

Studentship Projects

Project Reference Relationship Related To Start End Student Name
EP/R51245X/1 01/10/2017 30/09/2021
1955855 Studentship EP/R51245X/1 01/10/2017 30/09/2021 Feiyuan Yang Yang