In-situ Investigation of Memristive Effects in Integrated Devices based on 2D Nanomaterials

The project involves the study of memristive behaviour in 2D nanomaterials, such as transition metal dichalcogenides and their heterostructures. Our goal is the development of new technologies based on these materials, followed by their integration into resistive switching memory (RRAM) devices. We also aim to explore novel multi-terminal device architectures and fabrication techniques.

This research will employ state-of-the-art growth reactors and characterisation techniques, such as environmental electron microscopy, in-situ X-ray photoelectron spectroscopy and optical spectroscopy.

Our project aligns with the EPSRC research interest into microelectronic device technology, as well as the optoelectronic devices and circuits research area.