📣 Try out the NEW Gateway to Research and let us know what you think.

We're looking for users to test the new service during August and September and share their feedback. Express your interest by completing this short form.

The behaviour of oxygen at metal electrodes in HfO2 based resistive switching devices (2013)

First Author: Bradley S

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.mee.2013.03.132

Publication URI: http://dx.doi.org/10.1016/j.mee.2013.03.132

Type: Journal Article/Review

Parent Publication: Microelectronic Engineering