The effect of indium concentration on the optical properties of a -plane InGaN/GaN quantum wells grown on r -plane sapphire substrates (2011)
Attributed to:
Materials Challenges in GaN-based Light Emitting Structures
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1002/pssa.201001007
Publication URI: http://dx.doi.org/10.1002/pssa.201001007
Type: Journal Article/Review
Parent Publication: physica status solidi (a)
Issue: 7