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The effect of indium concentration on the optical properties of a -plane InGaN/GaN quantum wells grown on r -plane sapphire substrates (2011)

First Author: Badcock T

Attributed to: Study of semi-polar and non-polar nitride based structures for opto-electronic device applications funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssa.201001007

Publication URI: http://dx.doi.org/10.1002/pssa.201001007

Type: Journal Article/Review

Parent Publication: physica status solidi (a)

Issue: 7