Modification of carrier localization in basal-plane stacking faults: The effect of Si-doping in a -plane GaN Modification of carrier localization in basal-plane stacking faults (2012)

First Author: Badcock T
Attributed to:  Nitrides for the 21st century funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssb.201100480

Publication URI: http://dx.doi.org/10.1002/pssb.201100480

Type: Journal Article/Review

Parent Publication: physica status solidi (b)

Issue: 3