A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination (2014)
Attributed to:
AUTOFLEX - Automated Integration of Flexible Electronics
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.4870457
Publication URI: http://dx.doi.org/10.1063/1.4870457
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 13