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AlGaN/GaN field effect transistors for power electronics-Effect of finite GaN layer thickness on thermal characteristics (2013)

First Author: Hodges C

Attributed to: Novel High Thermal Conductivity Substrates for GaN Electronics: Thermal Innovation funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4831688

Publication URI: http://dx.doi.org/10.1063/1.4831688

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 20