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Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges (2013)

First Author: Killat N

Attributed to: Novel Thermal Management of Power Electronic Devices: High Power High Frequency Planar Gunn Diodes funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4829062

Publication URI: http://dx.doi.org/10.1063/1.4829062

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 19