Contactless Thermal Boundary Resistance Measurement of GaN-on-Diamond Wafers (2014)
Attributed to:
Novel Sub-Threshold Methodologies for GaN Electronic Devices: A Study of Device Reliability and Degradation Mechanisms
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/led.2014.2350075
Publication URI: http://dx.doi.org/10.1109/led.2014.2350075
Type: Journal Article/Review
Parent Publication: IEEE Electron Device Letters
Issue: 10