Impact of Intrinsic Stress in Diamond Capping Layers on the Electrical Behavior of AlGaN/GaN HEMTs (2013)
Attributed to:
Novel Sub-Threshold Methodologies for GaN Electronic Devices: A Study of Device Reliability and Degradation Mechanisms
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/ted.2013.2275031
Publication URI: http://dx.doi.org/10.1109/ted.2013.2275031
Type: Journal Article/Review
Parent Publication: IEEE Transactions on Electron Devices
Issue: 10