Doping of free-standing zinc-blende GaN layers grown by molecular beam epitaxy (2014)

First Author: Novikov S
Attributed to:  Free-standing wurtzite AlGaN substrates for deep ultraviolet (DUV) devices. funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2014.06.014

Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2014.06.014

Type: Journal Article/Review

Parent Publication: Journal of Crystal Growth

ISSN: 0022-0248