Doping of free-standing zinc-blende GaN layers grown by molecular beam epitaxy (2014)
Attributed to:
Free-standing wurtzite AlGaN substrates for deep ultraviolet (DUV) devices.
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2014.06.014
Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2014.06.014
Type: Journal Article/Review
Parent Publication: Journal of Crystal Growth
ISSN: 0022-0248