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Local structure of amorphous GaN1-xAsx semiconductor alloys across the composition range (2013)

First Author: Levander A

Attributed to: Free-standing zinc-blende (cubic) GaN, AlN and AlGaN layers grown by molecular beam epitaxy funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4812277

Publication URI: http://dx.doi.org/10.1063/1.4812277

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 24