Epitaxial lift-off of II-VI semiconductors from III-V substrates using a MgS release layer (2013)
Attributed to:
Development of an epitaxial lift-off technique for II-VI semiconductor heterostructures
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.4859515
Publication URI: http://dx.doi.org/10.1063/1.4859515
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 24