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Implications of gate-edge electric field in AlGaN/GaN high electron mobility transistors during OFF-state degradation (2014)

First Author: Sun H

Attributed to: Novel High Thermal Conductivity Substrates for GaN Electronics: Thermal Innovation funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.microrel.2014.09.020

Publication URI: http://dx.doi.org/10.1016/j.microrel.2014.09.020

Type: Journal Article/Review

Parent Publication: Microelectronics Reliability

Issue: 12