Growth of low dislocation density GaN using transition metal nitride masking layers (2007)
Attributed to:
Optimising GaN light emitting structures on free-standing GaN substrates
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2006.10.027
Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2006.10.027
Type: Journal Article/Review
Parent Publication: Journal of Crystal Growth