Growth of low dislocation density GaN using transition metal nitride masking layers (2007)

First Author: Moram M
Attributed to:  Materials Challenges in GaN-based Light Emitting Structures funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2006.10.027

Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2006.10.027

Type: Journal Article/Review

Parent Publication: Journal of Crystal Growth