Growth of dislocation-free GaN islands on Si(111) using a scandium nitride buffer layer (2007)

First Author: Moram M
Attributed to:  Materials Challenges in GaN-based Light Emitting Structures funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2007.09.009

Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2007.09.009

Type: Journal Article/Review

Parent Publication: Journal of Crystal Growth

Issue: 2