( In , Ga ) N / Ga N microcavities with double dielectric mirrors fabricated by selective removal of an (Al,In)N sacrificial layer (2007)
Attributed to:
Materials Challenges in GaN-based Light Emitting Structures
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.2712786
Publication URI: http://dx.doi.org/10.1063/1.2712786
Type: Journal Article/Review
Parent Publication: Applied Physics Letters
Issue: 11