Double-dielectric-mirror InGaN/GaN microcavities formed using selective removal of an AlInN layer (2007)
Attributed to:
Materials Challenges in GaN-based Light Emitting Structures
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.spmi.2007.03.031
Publication URI: http://dx.doi.org/10.1016/j.spmi.2007.03.031
Type: Journal Article/Review
Parent Publication: Superlattices and Microstructures
Issue: 5-6