Carrier Density Dependent Localization and Consequences for Efficiency Droop in InGaN/GaN Quantum Well Structures (2013)
Attributed to:
Science Bridge Award USA: Harnessing Materials for Energy
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.7567/jjap.52.08jk10
Publication URI: http://dx.doi.org/10.7567/jjap.52.08jk10
Type: Journal Article/Review
Parent Publication: Japanese Journal of Applied Physics
Issue: 8S