📣 Try out the NEW Gateway to Research and let us know what you think.

We're looking for users to test the new service during August and September and share their feedback. Express your interest by completing this short form.

Carrier Density Dependent Localization and Consequences for Efficiency Droop in InGaN/GaN Quantum Well Structures (2013)

First Author: Badcock T

Attributed to: Nitrides for the 21st century funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.7567/jjap.52.08jk10

Publication URI: http://dx.doi.org/10.7567/jjap.52.08jk10

Type: Journal Article/Review

Parent Publication: Japanese Journal of Applied Physics

Issue: 8S