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The Effect of Dislocation Density and Surface Morphology on the Optical Properties of InGaN/GaN Quantum Wells Grown on r-Plane Sapphire Substrates (2011)

First Author: Badcock T

Attributed to: Lighting the Future funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1143/jjap.50.080201

Publication URI: http://dx.doi.org/10.1143/jjap.50.080201

Type: Journal Article/Review

Parent Publication: Japanese Journal of Applied Physics

Issue: 8R