The Effect of Dislocation Density and Surface Morphology on the Optical Properties of InGaN/GaN Quantum Wells Grown on r-Plane Sapphire Substrates (2011)
Attributed to:
Lighting the Future
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1143/jjap.50.080201
Publication URI: http://dx.doi.org/10.1143/jjap.50.080201
Type: Journal Article/Review
Parent Publication: Japanese Journal of Applied Physics
Issue: 8R