Low dislocation density GaN growth on high-temperature AlN buffer layers on (0001) sapphire (2010)
Attributed to:
LED Lighting for the 21st Century
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2009.11.014
Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2009.11.014
Type: Journal Article/Review
Parent Publication: Journal of Crystal Growth
Issue: 3