Origin of additional threading dislocations in AlGaN grown on GaN using AlN as an interlayer (2008)
Attributed to:
Materials Challenges in GaN-based Light Emitting Structures
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1002/pssc.200778616
Publication URI: http://dx.doi.org/10.1002/pssc.200778616
Type: Journal Article/Review
Parent Publication: physica status solidi c
Issue: 6