Growth and characterization of unintentionally doped GaN grown on silicon(111) substrates (2008)
Attributed to:
Materials Challenges in GaN-based Light Emitting Structures
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2008.07.060
Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2008.07.060
Type: Journal Article/Review
Parent Publication: Journal of Crystal Growth
Issue: 23