Growth and characterization of unintentionally doped GaN grown on silicon(111) substrates (2008)

First Author: Leys M

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2008.07.060

Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2008.07.060

Type: Journal Article/Review

Parent Publication: Journal of Crystal Growth

Issue: 23