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Very low dislocation density, resistive GaN films obtained using transition metal nitride interlayers (2008)

First Author: Moram M

Attributed to: Materials Challenges in GaN-based Light Emitting Structures funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssa.200778608

Publication URI: http://dx.doi.org/10.1002/pssa.200778608

Type: Journal Article/Review

Parent Publication: physica status solidi (a)

Issue: 5