Very low dislocation density, resistive GaN films obtained using transition metal nitride interlayers (2008)

First Author: Moram M
Attributed to:  Materials Challenges in GaN-based Light Emitting Structures funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssa.200778608

Publication URI: http://dx.doi.org/10.1002/pssa.200778608

Type: Journal Article/Review

Parent Publication: physica status solidi (a)

Issue: 5