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The effect of wafer curvature on x-ray rocking curves from gallium nitride films (2008)

First Author: Moram M

Attributed to: Defect reduction in GaN using the in-situ growth of transition metal nitride layers funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.2913514

Publication URI: http://dx.doi.org/10.1063/1.2913514

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 9