The effect of wafer curvature on x-ray rocking curves from gallium nitride films (2008)
Attributed to:
Defect reduction in GaN using the in-situ growth of transition metal nitride layers
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.2913514
Publication URI: http://dx.doi.org/10.1063/1.2913514
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 9