The effect of oxygen incorporation in sputtered scandium nitride films (2008)
Attributed to:
Defect reduction in GaN using the in-situ growth of transition metal nitride layers
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.tsf.2008.05.050
Publication URI: http://dx.doi.org/10.1016/j.tsf.2008.05.050
Type: Journal Article/Review
Parent Publication: Thin Solid Films
Issue: 23