Application of highly silicon-doped marker layers in the investigation of unintentional doping in GaN on sapphire. (2010)
Attributed to:
LED Lighting for the 21st Century
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.ultramic.2010.10.008
PubMed Identifier: 21115277
Publication URI: http://europepmc.org/abstract/MED/21115277
Type: Journal Article/Review
Volume: 111
Parent Publication: Ultramicroscopy
Issue: 1
ISSN: 0304-3991