Processing of 50 nm gate-length hydrogen terminated diamond FETs for high frequency and high power applications (2011)

First Author: Moran D
Attributed to:  Ultra short gate length diamond FETs for high power/high frequency applications funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.mee.2010.11.029

Publication URI: http://dx.doi.org/10.1016/j.mee.2010.11.029

Type: Journal Article/Review

Parent Publication: Microelectronic Engineering

Issue: 8